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Normally-Off Operation of AlGaN/GaN Heterojunction Field-Effect Transistor with Clamping Diode
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 Title & Authors
Normally-Off Operation of AlGaN/GaN Heterojunction Field-Effect Transistor with Clamping Diode
Han, Sang-Woo; Park, Sung-Hoon; Kim, Hyun-Seop; Lim, Jongtae; Cho, Chun-Hyung; Cha, Ho-Young;
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This paper reports a new method to enable the normally-off operation of AlGaN/GaN heterojunction field-effect transistors (HFETs). A capacitor was connected to the gate input node of a normally-on AlGaN/GaN HFET with a Schottky gate where the Schottky gate acted as a clamping diode. The combination of the capacitor and Schottky gate functioned as a clamp circuit to downshift the input signal to enable the normally-off operation. The normally-off operation with a virtual threshold voltage of 5.3 V was successfully demonstrated with excellent dynamic switching characteristics.
AlGaN/GaN heterojunction field-effect transistor;clamp circuit;normally-off operation;Schottky gate;
 Cited by
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