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2-6 GHz GaN HEMT Power Amplifier MMIC with Bridged-T All-Pass Filters and Output-Reactance-Compensation Shorted Stubs
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 Title & Authors
2-6 GHz GaN HEMT Power Amplifier MMIC with Bridged-T All-Pass Filters and Output-Reactance-Compensation Shorted Stubs
Lee, Sang-Kyung; Bae, Kyung-Tae; Kim, Dong-Wook;
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 Abstract
This paper presents a 2-6 GHz GaN HEMT power amplifier monolithic microwave integrated circuit (MMIC) with bridged-T all-pass filters and output-reactance-compensation shorted stubs using the GaN HEMT foundry process that is developed by WIN Semiconductors, Inc. The bridged-T filter is modified to mitigate the bandwidth degradation of impedance matching due to the inherent channel resistance of the transistor, and the shorted stub with a bypass capacitor minimizes the output reactance of the transistor to ease wideband load impedance matching for maximum output power. The fabricated power amplifier MMIC shows a flat linear gain of 20 dB or more, an average output power of 40.1 dBm and a power-added efficiency of 19-26 % in 2 to 6 GHz, which is very useful in applications such as communication jammers and electronic warfare systems.
 Keywords
GaN;HEMT;Power amplifier;MMIC;All-pass filter;Reactance compensation;
 Language
English
 Cited by
 References
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