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Atomic Layer Deposition of TiO2 using Titanium Isopropoxide and H2O: Operational Principle of Equipment and Parameter Setting
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 Title & Authors
Atomic Layer Deposition of TiO2 using Titanium Isopropoxide and H2O: Operational Principle of Equipment and Parameter Setting
Cho, Karam; Park, Jung-Dong; Shin, Changhwan;
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Titanium dioxide () films are deposited by atomic layer deposition (ALD) using titanium isopropoxide (TTIP) and as precursors. The operating instructions for the ALD equipment are described in detail, along with the settings for relevant parameters. The thickness of the film is measured, and thereby, the deposition rate is quantitatively estimated to verify the linearity of the deposition rate.
Atomic layer deposition;;titanium isopropoxide;;
 Cited by
Kemell, M., Pore, V., Tupala, J., Ritala, M., Leskela, M., "Atomic layer deposition of nanostructured $TiO_2$ photocatalysts via template approach", Chemistry of Materials, Vol.19, No.7, pp.1816-20, 2007. crossref(new window)

Euvananont, C., Junin, C., Inpor, K., Limthongkul, P., Thanachayanont, C., "$TiO_2$ optical coating layers for self-cleaning applications", Ceramics International, Vol.34, No.4, pp.1067-71, 2008. crossref(new window)

Wang, C.-W., Chen, S.-F., Chen, G.-T., "Gamma-ray-irradiation effects on the leakage current and reliability of sputtered $TiO_2$ gate oxide in metal-oxide-semiconductor capacitors", J. Appl. Phys., Vol.91, pp.9198-203, 2002. crossref(new window)

Frohlich, K., Tapajna, M., Rosova, A., Dobrocka, E., Husekova, K., Aarik, J., et al., "Growth of highdielectric- constant $TiO_2$ films in capacitors with $RuO_2$ electrodes", Electrochemical and Solid-State Letters, Vol.11, No.6, pp.G19-G21, 2008. crossref(new window)

Wu, T., Wu, C., Chen, M., "Highly insulative barium zirconate-titanate thin films prepared by rf magnetron sputtering for dynamic random access memory applications", Appl. Phys. Lett., Vol.69, No.18, pp.2659-61, 1996. crossref(new window)

Kim, K., Lee, S., "Integration of lead zirconium titanate thin films for high density ferroelectric random access memory", J. Appl. Phys., Vol.100, No.5, pp.051604, 2006. crossref(new window)

Aarik, L., Arroval, T., Rammula, R., Mandar, H., Sammelselg, V., Aarik, J., "Atomic layer deposition of TiO 2 from TiCl 4 and O 3", Thin Solid Films, Vol.542, pp.100-7, 2013. crossref(new window)

Elam, J., Schuisky, M., Ferguson, J., George, S., "Surface chemistry and film growth during TiN atomic layer deposition using TDMAT and NH 3", Thin Solid Films, Vol.436, No.2, pp.145-56, 2003. crossref(new window)

Ritala, M., Leskela, M., Niinisto, L., Haussalo, P., "Titanium isopropoxide as a precursor in atomic layer epitaxy of titanium dioxide thin films", Chemistry of materials, Vol.5, No.8, pp.1174-81, 1993. crossref(new window)

Xie, Q., Jiang, Y.-L., Detavernier, C., Deduytsche, D., Van Meirhaeghe, R. L., Ru, G.-P., et al., "Atomic layer deposition of TiO2 from tetrakis-dimethyl-amido titanium or Ti isopropoxide precursors and $H_2O$", J. Appl. Phys., Vol.102, No.8, pp.083521, 2007. crossref(new window)