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Preparation and Field-Induced Electrical Properties of Perovskite Relaxor Ferroelectrics
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 Title & Authors
Preparation and Field-Induced Electrical Properties of Perovskite Relaxor Ferroelectrics
Fan, Huiqing; Peng, Biaolin; Zhang, Qi;
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 Abstract
(111)-oriented and random oriented (PBZ) perovskite relaxor ferroelectric thin films were fabricated on Pt(111)///Si substrate by sol-gel method. Nano-scaled antiferroelectric and ferroelectric two-phase coexisted in both (111)-oriented and random oriented PBZ thin film. High dielectric tunability (${\eta}
 Keywords
Relaxor ferroelectrics;Dielectric tunability;Electrocaloric;Sol-gel;Field-induced phase transition;
 Language
English
 Cited by
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