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Charge Spreading Effect of Stored Charge on Retention Characteristics in SONOS NAND Flash Memory Devices
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 Title & Authors
Charge Spreading Effect of Stored Charge on Retention Characteristics in SONOS NAND Flash Memory Devices
Kim, Seong-Hyeon; Yang, Seung-Dong; Kim, Jin-Seop; Jeong, Jun-Kyo; Lee, Hi-Deok; Lee, Ga-Won;
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 Abstract
This research investigates the impact of charge spreading on the data retention of three-dimensional (3D) silicon-oxide-nitride-oxide-silicon (SONOS) flash memory where the charge trapping layer is shared along the cell string. In order to do so, this study conducts an electrical analysis of the planar SONOS test pattern where the silicon nitride charge storage layer is not isolated but extends beyond the gate electrode. Experimental results from the test pattern show larger retention loss in the devices with extended storage layers compared to isolated devices. This retention degradation is thought to be the result of an additional charge spreading through the extended silicon nitride layer along the width of the memory cell, which should be improved for the successful 3-D application of SONOS flash devices.
 Keywords
NVM;SONOS;Retention;Charge migration;
 Language
English
 Cited by
 References
1.
J. Choi and K. S. Seol, Symposium on VLSI Technology 2011 p. 178.

2.
S. M. Jung, J. Jang, W. Cho, H. Cho, J. Jeong, Y. Chang, J. Kim, Y. Rah, Y. Son, J. Park, M. S. Song, K. H. Kim, J. S. Lim, and K. Kim, International Electron Devices Meeting 2006 p. 1.

3.
M. K. Cho and D. M. Kim, Electron Device Letters, 21, 399 (2000). [DOI: http://dx.doi.org/10.1109/55.852963] crossref(new window)

4.
Y. Park, J. Choi, C. Kang, C. Lee, Y. Shin, B. Choi, J. Kim, S. Jeon, J. Sel, J. Park, K. Choi, T. Yoo, J. Sim, and K. Kim, International Electron Devices Meeting 2006 p. 1.

5.
B. De Salvo, C. Gerardi, R. van Schaijk, S. A. Lombardo, D. Corso, C. Plantamura, S. Serafino, G. Ammendola, M. van Duuren, P. Goarin, W. Y. Mei, K. van der Jeugd, T. Baron, M. GelyGely, P. Mur, and S. Deleonibus, IEEE Transactions on Device and Materials Reliability, 4, 377 (2004). [DOI: http://dx.doi.org/10.1109/TDMR.2004.837209] crossref(new window)

6.
H. Tanaka, M. Kido, K. Yahashi, M. Oomura, R. Katsumata, M. Kito, Y. Fukuzumi, M. Sato, Y. Nagata, Y. Matsuoka, Y. Iwata, H. Aochi, and A. Nitayama, IEEE Symposium on VLSI Technology 2007 p. 14.

7.
R. Katsumata, M. Kito, Y. Fukuzumi, M. Kido, H. Tanaka, Y. Komori, M. Ishiduki, J. Matsunami, T. Fujiwara, Y. Nagata, L. Zhang, Y. Iwata, R. Kirisawa, H. Aochi, and A. Nitayama, IEEE Symposium on VLSI Technology 2009 p. 136.

8.
J. Jang, H. S. Kim, W. Cho, H. Cho, J. Kim, S.I. Shim, Y. Jang, J. H. Jeong, B. K. Son, D. W. Kim, Kihyun, J. J. Shim, J. S. Lim, K. H. Kim, S. Y. Yi, J. Y. Lim, D. Chung, H. C. Moon, S. Hwang, J. W. Lee, Y. H. Son, U. I. Chung, and W. S. Lee, Symposium on VLSI Technology 2009 p. 192.

9.
W. Kim, S. Choi, J. Sung, T. Lee, C. Park, H. Ko, J. Jung, I. Yoo, and Y. Park, Symposium on VLSI Technology 2009 p. 188.

10.
E. S. Choi and S. K. Park, IEEE International Electron Devices Meeting (IEDM) 2012 p. 9.4.1

11.
Y. Roizin, M. Gutman, E. Aloni, V. Kairys, and P. Zisman, Non-Volatile Semi. Memory Workshop 2001, p.128

12.
E. Lusky, Y. Shacham-Diamand, I. Bloom, and B. Eitan, Ext. Abst. 201 Conf. Solid State Devices and Materials, 2001, p.534

13.
H. W. You and W. J. Cho, Appl. Phys. Lett., 96, 093506 (2010). [DOI: http://dx.doi.org/10.1063/1.3337103] crossref(new window)

14.
A. Suhane, A. Arreghini, G. Van den bosch, L. Breuil, A. Cacciato, A. Rothschild, M. Jurczak, J. Van Houdt, and K. De Meyer, Proceedings of the European presented at the Solid State Device Research Conference 2009 p. 276. [DOI: http://dx.doi.org/10.1109/ESSDERC.2009.5331460] crossref(new window)

15.
T. Melde, M. F. Beug, L. Bach, S. Riedel, C. Ludwig, and T. Mikolaijck, International Conference on Memory Technology and Design presented at the Non-Volatile Semiconductor Memory Workshop 2008 p. 130. [DOI: http://dx.doi.org/10.1109/NVSMW.2008.46] crossref(new window)

16.
C. Kang, J. Choi, J. Sim, C. Lee, Y. Shin, J. Park, J. Sel, S. Jeon, Y. Park, and K. Kim, Proceedings of 45th Annual IEEE International Reliability Physics Symposium 2007 p. 167

17.
A. Maconi, A. Arreghini, and C. M. Compagnoni, Solid-State Electronics, 74, 64 (2012). [DOI: http://dx.doi.org/10.1016/j.sse.2012.04.013] crossref(new window)

18.
S. Park, S. Choi, K. S. Jeon, H. J. Kim, S. M. Rhee, I. Yoon, and Y.J. Park, Proc. of SISPAD 2012 p.376