Publisher : The Korean Institute of Electrical and Electronic Material Engineers
DOI : 10.4313/TEEM.2015.16.4.187
Title & Authors
Low-Temperature Poly-Si TFT Charge Trap Flash Memory with Sputtered ONO and Schottky Junctions An, Ho-Myoung; Kim, Jooyeon;
A charge-trap flash (CTF) thin film transistor (TFT) memory is proposed at a low-temperature process (≤ 450℃). The memory cell consists of a sputtered oxide-nitride-oxide (ONO) gate dielectric and Schottky barrier (SB) source/drain (S/D) junctions using nickel silicide. These components enable the ultra-low-temperature process to be successfully achieved with the ONO gate stacks that have a substrate temperature of room temperature and S/D junctions that have an annealing temperature of 200℃. The silicidation process was optimized by measuring the electrical characteristics of the Ni-silicided Schottky diodes. As a result, the Ion/Ioff current ratio is about 1.4×105 and the subthreshold swing and field effect mobility are 0.42 V/dec and 14 cm2/V·s at a drain voltage of −1 V, respectively.