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Low-Temperature Poly-Si TFT Charge Trap Flash Memory with Sputtered ONO and Schottky Junctions
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 Title & Authors
Low-Temperature Poly-Si TFT Charge Trap Flash Memory with Sputtered ONO and Schottky Junctions
An, Ho-Myoung; Kim, Jooyeon;
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A charge-trap flash (CTF) thin film transistor (TFT) memory is proposed at a low-temperature process (≤ 450℃). The memory cell consists of a sputtered oxide-nitride-oxide (ONO) gate dielectric and Schottky barrier (SB) source/drain (S/D) junctions using nickel silicide. These components enable the ultra-low-temperature process to be successfully achieved with the ONO gate stacks that have a substrate temperature of room temperature and S/D junctions that have an annealing temperature of 200℃. The silicidation process was optimized by measuring the electrical characteristics of the Ni-silicided Schottky diodes. As a result, the Ion/Ioff current ratio is about 1.4×105 and the subthreshold swing and field effect mobility are 0.42 V/dec and 14 cm2/V·s at a drain voltage of −1 V, respectively.
Low-temperature polycrystalline silicon (LTPS);Charge-trap flash (CTF);Thin film transistor (TFT);Schottky barrier (SB) junction;Ni-silicide;
 Cited by
Preparation of Mono-Layered Ag Nanoparticles for Charge-Trap Sites of Memory Thin-Film Transistors Using In-Ga-Zn-O Channel, ECS Journal of Solid State Science and Technology, 2017, 6, 1, Q18  crossref(new windwow)
M. Zhang, W. Zhou, R. Chen, M. Wong, and H. S. Kwok, Microelectronics Reliability, 54, 30 (2014). [DOI:] crossref(new window)

S. W. Jung, S. H. Hwang, and J. Yi, Thin Solid Films, 517, 362 (2008). [DOI:] crossref(new window)

S. C. Chen, T. C. Chang, P. T. Liu, Y. C. Wu, P. H. Yeh, C. F. Weng, S. M. Sze, C. Y. Chang, and C. H. Lien, Appl. Phys. Lett., 90, 122111 (2007). [DOI:] crossref(new window)

S. W. Jung, K. S. Jang, Y. J. Lee, Z. Jin, and J. S. Yi, Materials Science and Engineering: B, 167, 167 (2010). [DOI:] crossref(new window)

C. K. Huang, W. E. Zhang, and C. H. Yang, IEEE Trans. Electron Devices, 45, 842 (1998). [DOI:] crossref(new window)

J. M. Larson and J. P. Snyder, IEEE Trans. Electron Devices, 53, 1048 (2006). [DOI:] crossref(new window)

M. Jang, Y. Kim, J. Shin, S. Lee, and K. Park, Appl. Phys. Lett., 84, 741 (2004). [DOI:] crossref(new window)

M. Nishisaka, S. Matsumoto, and T. Asano, Jpn. J. Appl. Phys., 42, 2009 (2003). [DOI:] crossref(new window)

R. T. Tung, Mater. Sci. Eng., 35, 1 (2001). [DOI:] crossref(new window)