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Organic Bistable Switching Memory Devices with MeH-PPV and Graphene Oxide Composite
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 Title & Authors
Organic Bistable Switching Memory Devices with MeH-PPV and Graphene Oxide Composite
Senthilkumar, V.; Kim, Yong Soo;
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 Abstract
We have reported about bipolar resistive switching effect on Poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene]:Graphene oxide composite films, which are sandwiched between aluminum and indium tin oxide electrodes. In this case, I-V sweep curve showed a hysteretic behavior, which varied according to the polarity of the applied voltage bias. The device exhibited excellent switching characteristics, with the ON/OFF ratio being approximately two orders in magnitude. The device had good endurance (105 cycles without degradation) and long retention time (5 × 103 s) at room temperature. The bistable switching behavior varied according to the trapping and de-trapping of charges on GO sites; the carrier transport was described using the space-charge-limited current (SCLC) model.
 Keywords
Polymer composite;Spin coating;Resistive memory;Retention;Endurance;
 Language
English
 Cited by
 References
1.
Y. Park, D. Gupta, C. Lee, and Y. Hong, Org. Electron., 13, 2887 (2012). [DOI: http://dx.doi.org/10.1021/ja0717459] crossref(new window)

2.
T. L. Choi, K. H. Lee, W. J. Woo, S. Lee, T. W. Lee, and M. Y. Chae, J. Am. Chem Soc., 129, 9842 (2007). [DOI: http://dx.doi.org/10.1021/ja0717459] crossref(new window)

3.
J. Ouyang, C. W. Chu, C. R. Szmanda, L. Ma, and Y. Yang, Nat. Mater., 3, 918 (2004). [DOI: http://dx.doi.org/10.1038/nmat1269] crossref(new window)

4.
T. W. Kim, Y. Yang, F. Li, and W. L. Kwan, NPG Asia Mater., 4, e18 (2012). [DOI: http://dx.doi.org/10.1038/am.2012.32] crossref(new window)

5.
G. Liu, X. Zhuang, Y. Chen, B. Zhang, J. Zhu, C. X. Zhu, K. G. Neoh, and E. T. Kang, Appl. Phys. Lett., 95, 253301 (2009). [DOI: http://dx.doi.org/10.1063/1.3276556] crossref(new window)

6.
X. D. Zhuang, Y. Chen, G. Liu, P. P. Li, C. X. Zhu, E. T. Kan, K. G. Noeh, B. Zhang, J. H. Jhu, and Y. X. Li, Adv. Mater., 22, 1731 (2010). [DOI: http://dx.doi.org/10.1002/adma.200903469] crossref(new window)

7.
C. Wu, F. Li, Y. Zhang, T. Guo, and T. Chen, Appl. Phys. Lett., 99, 042108 (2011). [DOI: http://dx.doi.org/10.1063/1.3619815] crossref(new window)

8.
F. Li, D. I. Son, H. M. Cha, S. M. Seo, B. J. Kim, H. J. Kim, J. H. Jung, and T. W. Kim, Appl. Phys. Lett., 90, 222109 (2007). [DOI: http://dx.doi.org/10.1063/1.2745219] crossref(new window)

9.
S. Patil, Q. Lai, F. Marchioni, M. Jung, Z. Zhu, Y. Chen, and F. Wudl, J. Mater. Chem., 16, 4160 (2006). [DOI: http://dx.doi.org/10.1039/b605769a] crossref(new window)

10.
D. I. Son, T. W. Kim, J. H. Shim, J. H. Jung, D. U. Lee, J. M. Lee, W. I. Park, and W. K. Choi, Nano Lett., 10, 2441 (2010). [DOI: http://dx.doi.org/10.1021/nl1006036] crossref(new window)

11.
D. I. Son, D. H. Park, W. K. Choi, S. H. Cho, W. T. Kim, and T. W. Kim, Nanotechnology, 20, 195203 (2009). [DOI: http://dx.doi.org/10.1088/0957-4484/20/19/195203] crossref(new window)

12.
CH.V.V. Ramana, M. K. Moodely, V. Kannan, A. Maity, J. Jayaramudu, and W. Clarke, Sensors and Actuators B, 161, 684 (2012). [DOI: http://dx.doi.org/10.1016/j.snb.2011.11.012] crossref(new window)

13.
T. Y. Chang, Y. W. Cheng, and P. T. Lee, Appl. Phys. Lett., 96, 043309 (2010). [DOI: http://dx.doi.org/10.1063/1.3299265] crossref(new window)

14.
G. T. Wright, Nature, 182, 1296 (1958). [DOI: http://dx.doi.org/10.1038/1821296a0] crossref(new window)

15.
D. S. Shang, Q. Wang, L. D. Chen, R. Dong, X. M. Li, and Q. Q. Zhang, Phys. Rev. B, 73, 245427 (2006). [DOI: http://dx.doi.org/10.1103/PhysRevB.73.245427] crossref(new window)