JOURNAL BROWSE
Search
Advanced SearchSearch Tips
Comparison of Ga-doped and Ag-doped ZnO Nanowire Gas-sensor Sensitivity and Selectivity
facebook(new window)  Pirnt(new window) E-mail(new window) Excel Download
 Title & Authors
Comparison of Ga-doped and Ag-doped ZnO Nanowire Gas-sensor Sensitivity and Selectivity
Lee, Sang Yeol;
  PDF(new window)
 Abstract
Pure ZnO, ZnO nanowires doped with 3 wt.% Ga (3GZO) and doped with 3 wt.% Ag (3SZO) were grown by a hot-walled pulse laser deposition (HW-PLD) technique. The optical and chemical properties of Ga and Ag doped nanowires was analyzed. Nanowires were determined to be under 200 nm in diameter and several μm in length. Change of significant resistance was observed and the gas detection sensitivities of ZnO, 3GZO and 3SZO nanawires were compared. The sensitivities of ZnO, 3GZO, and 3SZO nanowire sensors were measured at 300℃ for 1 ppm of ethanol gas at 97%, 48%, and 203%, respectively.
 Keywords
Ga-doped ZnO;Ag-doped ZnO;Nanowires;Ethanol gas sensor;Hot walled pulsed laser deposition;
 Language
English
 Cited by
 References
1.
Z. L. Wang, Ann. Rev. Mater. Res., 55, 159 (2004).

2.
A. Kolmakov, M. Moskovits, Ann. Rev. Mater. Res., 34, 151 (2004). [DOI: http://dx.doi.org/10.1146/annurev.matsci.34.040203.112141] crossref(new window)

3.
J. G. Lu, P. Chang, Z. Fan, Mater. Sci. Eng. R, 52, 49 (2006). [DOI: http://dx.doi.org/10.1016/j.mser.2006.04.002] crossref(new window)

4.
E. S. Snow, F. K. Perkins, J. A. Robinson, Chem. Soc. Rev., 35, 790 (2006). [DOI: http://dx.doi.org/10.1039/b515473c] crossref(new window)

5.
P. C. Chen, G. Shen, and C. Zhou, IEEE Trans. Nanotech., 7, 668 (2008). [DOI: http://dx.doi.org/10.1109/TNANO.2008.2006273] crossref(new window)

6.
K. W. Kim, Y. W. Song, S. P. Chang, I. H. Kim, S. S. Kim, and S. Y. Lee, Thin Solid Films, 518, 1190 (2009). [DOI: http://dx.doi.org/10.1016/j.tsf.2009.03.229] crossref(new window)

7.
N. O. Korsunska, L. V. Borkovska, B. M. Bulakh, L. Yu. Khomenkova, V. I. Kushnirenko, I. V. Markevich, and J. Lumin, Journal of Luminescence, 102/103, 733 (2003). [DOI: http://dx.doi.org/10.1016/S0022-2313(02)00634-8] crossref(new window)

8.
K. Vanheusden, W. L. Warren, C. H. Seager, D. R. Tallant, J. A. Voigt, and B. E. Gnade, J. Appl. Phys., 79, 7983 (1996). [DOI: http://dx.doi.org/10.1063/1.362349] crossref(new window)

9.
J. Zhong, S. Muthukumar, Y. Chen, Y. Lu, H. M. Ng, W. Jiang, and E. L. Garfunkel, Appl. Phys. Lett., 83, 3401 (2003). [DOI: http://dx.doi.org/10.1063/1.1621729] crossref(new window)

10.
D. H. Zhang, Z. Q. Liu, C. Li, T. Tang, X. L. Liu, S. Han, B. Lei, and C. W. Zhou, Nano Lett., 4, 1919 (2004). [DOI: http://dx.doi.org/10.1021/nl0489283] crossref(new window)

11.
D. H. Zhang, C. Li, X. L. Liu, S. Han, T. Tang, and C. W. Zhou, Appl. Phys. Lett., 83, 1845 (2003). [DOI: http://dx.doi.org/10.1063/1.1604194] crossref(new window)

12.
C. Li, D. H. Zhang, B. Lei, S. Han, X. L. Liu, and C. W. Zhou, J. Phys. Chem. B, 107, 12451 (2003). [DOI: http://dx.doi.org/10.1021/jp0361531] crossref(new window)

13.
M. W. Ahn, K. S. Park, J. H. Heo, J. G. Park, D. W. Kim, K. J. Choi, J. H. Lee, and S. H. Hong, Appl. Phys. Lett., 93, 263103/1 (2008).

14.
W. F. Zhang, Z. B. He, G. D. Yuan, J. S. Jie, L. B. Luo, X. J. Zhang, Z. H. Chen, C. S. Lee, W. J. Zhang, and S. T. Lee, High performance, Appl. Phys. Lett., 94, 123103/1 (2009).

15.
W. Zhang, J. Jie, Z. He, S. Tao, X. Fan, Y. Zhou, G. Yuan, L. Luo, W. Zhang, C. Lee, and S. Lee, Appl. Phys. Lett., 92, 153312/1 (2008).

16.
M. W. Ahn, K. S. Park, J. H. Heo, J. G. Park, D. W. Kim, K. J. Choi, J. H. Lee, and S. H. Hong, Appl. Phys. Lett., 93, 263103/1 (2008).

17.
B. Xiang, P. Wang, X. Zhang, S. A. Dayeh, D. P. R. Aplin, C. Spci, D. Yu, and D. Wang, Nano Lett., 7, 323 (2007). [DOI: http://dx.doi.org/10.1021/nl062410c] crossref(new window)

18.
G. D. Yuan, W. J. Zhang, J. S. Jie, X. Fan, J. A. Zapien, Y. H. Leung, L. B. Luo, P. F. Wang, C. S. Lee, and S. T. Lee, Nano Lett., 8, 2591 (2008). [DOI: http://dx.doi.org/10.1021/nl073022t] crossref(new window)

19.
H. S. Kang, B. D. Ahn, J. H. Kim, G. H. Kim, S. H. Lim, H. W. Chang, and S. Y. Lee, Appl. Phys. Lett., 88, 202108 (2006). [DOI: http://dx.doi.org/10.1063/1.2203952] crossref(new window)

20.
T. J. Hsueh, C. L. Hsu, S. J. Chang, and I. C. Chen, Sens. Actuators B: Chem., 126, 473 (2007). [DOI: http://dx.doi.org/10.1016/j.snb.2007.03.034] crossref(new window)

21.
Z. Yanga, Y. Huang, G. Chen, Z. Guoc, S. Cheng, and S. Huange, Sensors and Actuators B, 140, 549 (2009). [DOI: http://dx.doi.org/10.1016/j.snb.2009.04.052] crossref(new window)

22.
S. Y. Lee, Trans. Electr. Electron. Mater., 16, 78 (2015). [DOI: http://dx.doi.org/10.4313/TEEM.2015.16.2.78] crossref(new window)