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Correlation between the Annealing Effect and the Electrical Characteristics of the Depletion Region in ZnO, SnO2 and ZTO Films
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 Title & Authors
Correlation between the Annealing Effect and the Electrical Characteristics of the Depletion Region in ZnO, SnO2 and ZTO Films
Oh, Teresa;
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 Abstract
To research the correlation between oxygen vacancy and the electrical characteristics of ZTO, which is made by using a target mixed ZnO:SnO2
 Keywords
ZnO;SnO2;ZTO;XPS;Oxygen vacancy;Depletion region;XRD;
 Language
English
 Cited by
 References
1.
T. Oh, Materials Research Bulletin, 77, 1 (2016). [DOI: http://dx.doi.org/10.1016/j.materresbull.2015.11.038] crossref(new window)

2.
O. Mitrofanov and M. Mantra, J. Appl. Phys., 95, 6414 (2004). [DOI: http://dx.doi.org/10.1063/1.1719264] crossref(new window)

3.
M. E. Lopes, H. L. Gomes, M.C.R. Medeiros, P. Barquinha, L. Pereira, E. Fortunato, R. Martins, and I. Ferreira, Appl. Phys. Lett., 95 063502 (2009). [DOI: http://dx.doi.org/10.1063/1.3187532] crossref(new window)

4.
T. Hirao, M. Furuta, T. Hiramatsu, T. Matsuda, C. Li, H. Furuta, H. Hokari, M. Yoshida, H. Ishii, and M. Kakegawa, IEEE Trans. Electron Devices, 55, 3136 (2008). [DOI: http://dx.doi.org/10.1109/TED.2008.2003330] crossref(new window)

5.
J. Maserjian and N. Zamani, Appl. Phys. Lett., 53, 559 (1982).

6.
L. Plantier et al., Microelectron. Eng. 83, 2407 (2006). [DOI: 10.1088/1009-0630/14/7/12] crossref(new window)

7.
A. Grill and D. A. Neumayer, J. Appl. Phys. 94, 6697 (2003). [http://dx.doi.org/10.1063/1.1618358] crossref(new window)

8.
S. H. Lee, K. T. Park, and Y. G. Son, Korea Journal of Materials Reasearch, 12, 240 (2002). [DOI: http://dx.doi.org/10.3740/MRSK.2002.12.4.240] crossref(new window)

9.
H. Hosono, J. Noncrystralline Solids, 352, 851 (2006). [DOI: http://dx.doi.org/10.1016/j.jnoncrysol.2006.01.073]. crossref(new window)

10.
O. Mitrofanov and M. Manfra, J. Appl. Phys., 95, 6414 (2004). [DOI: http://dx.doi.org/10.1063/1.1719264]. crossref(new window)

11.
T. Oh and C. H. Kim, IEEE Trans. Plasma Science, 38, 1598 (2010). [DOI: http://dx.doi.org/10.1109/TPS.2010.2049665]. crossref(new window)

12.
T. Oh, Transactions of the Materials Research Society of Japan, 39, 475 (2014). [DOI: http://doi.org/10.14723/tmrsj.39.475] crossref(new window)

13.
J. Raja, K. S. Jang, C.P.T. Nguyen, and J. S. Yi, N. Balaji and S. Q. Hussain, and S. Chatterjee, TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS, 16, 234 (2015). [DOI: http://dx.doi.org/10.4313/TEEM.2015.16.5.234] crossref(new window)

14.
K. C. Park and T. Y. Ma, J. Korean Inst. Electr. Electron. Mater. Eng., 26, 373 (2013). [DOI: http://dx.doi.org/10.4313/JKEM.2013.26.5.373] crossref(new window)

15.
T. Y. Ma, J. Korean Inst. Electr. Electron. Mater. Eng., 25, 304, (2012). [DOI: http://dx.doi.org/10.4313/JKEM.2012.25.4.304] crossref(new window)

16.
L. S. Vlasenko and G. D. Watkins, Phys. Lett. B, 71, 125210 (2005). [DOI: http://dx.doi.org/10.1103/PhysRevB.71.125210]. crossref(new window)

17.
T. Oh, Journal of nanoscience and nanotechnology, 14, 9047 (2014). [DOI: http://dx.doi.org/10.1166/jnn.2014.10071] crossref(new window)

18.
H. G. Kim, Trans. Electr. Electron. Mater., 16, 285 (2015). DOI: http://dx.doi.org/10.4313/TEEM.2015.16.5.285E\] crossref(new window)

19.
T. Oh, EML, 11, 853 (2015). [DOI: http://dx.doi.org/10.1007/s13391-015-4505-3]

20.
T. Oh and C. K. Choi, J. Korean Phys. Soc., 56, 1150 (2010). [DOI: http://dx.doi.org/10.3938/jkps.56.1150] crossref(new window)