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A Disparate Low Loss DC to 90 GHz Wideband Series Switch
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 Title & Authors
A Disparate Low Loss DC to 90 GHz Wideband Series Switch
Gogna, Rahul; Jha, Mayuri; Gaba, Gurjot Singh; Singh, Paramdeep;
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 Abstract
This paper presents design and simulation of wide band RF microswitch that uses electrostatic actuation for its operation. RF MEMS devices exhibit superior high frequency performance in comparison to conventional devices. Similar techniques that are used in Very Large Scale Integration (VLSI) can be employed to design and fabricate MEMS devices and traditional batch-processing methods can be used for its manufacturing. The proposed switch presents a novel design approach to handle reliability concerns in MEMS switches like dielectric charging effect, micro welding and stiction. The shape has been optimized at actuation voltage of 14-16 V. The switch has an improved restoring force of 20.8 μN. The design of the proposed switch is very elemental and primarily composed of electrostatic actuator, a bridge membrane and coplanar waveguide which are suspended over the substrate. The simple design of the switch makes it easy for fabrication. Typical insertion and isolation of the switch at 1 GHz is -0.03 dB and -71 dB and at 85 GHz it is -0.24 dB and -29.8 dB respectively. The isolation remains more than - 20 db even after 120 GHz. To our knowledge this is the first demonstration of a metal contact switch that shows such a high and sustained isolation and performance at W-band frequencies with an excellent figure-of merit (fc
 Keywords
RF MEMS;Anti-stiction;Reliability;High isolation;Broadband antennas;Micro-welding;Metal contact switch;
 Language
English
 Cited by
 References
1.
C. Bozler, R. Drangmeister, S. Duffy,M. Gouker, J. Knecht, L. Kushner, R. Parr, S. Rabe, and L. Travis, IEEE MTT-S Int. Microwave Symp., 153 (2000).

2.
N. E. McGruer, P. M. Zavracky, R. Morrison, S. Majumder, D. Potter, and M. Schirmer, Sensor Expo, (Cleveland, U.S.A., 1999).

3.
M. Kim, J. B. Hacker, R. E. Mihailovich, and J. F. DeNatale, IEEE Microwave Wireless Compon. Lett., 11, 56 (2001). [DOI: http://dx.doi.org/10.1109/7260.914301] crossref(new window)

4.
C. L. Goldsmith, J. Randall, S. Eshelman, T. H. Lin, D. Denniston, S. Chen, and B. Norvell, IEEE MTT-S Int. Microwave Symp. Dig., 1141 (1996). [DOI: http://dx.doi.org/10.1109/mwsym.1996.511231] crossref(new window)

5.
C. L. Goldsmith, Z. Yao, S. Eshelman, and D. Denniston, IEEE Microwave Guided Wave Lett., 269 (1998). [DOI: http://dx.doi.org/10.1109/75.704410] crossref(new window)

6.
S. Pacheco, C. T. Nguyen, and L. P. B. Katehi, IEEE MTT-S Int. Microwave Symp. Dig., 1569 (1998). [DOI: http://dx.doi.org/10.1109/mwsym.1998.700675] crossref(new window)

7.
J. B. Muldavin and G. M. Rebeiz, IEEE Microwave Wireless Compon. Lett., 11, 373 (2001). [DOI: http://dx.doi.org/10.1109/7260.950765] crossref(new window)

8.
S. C. Shen, D. Caruth, and M. Feng, Proc. IEEE GaAs IC Symp., 161 (2000).

9.
G. M. Rebeiz, RF MEMS Theory, Design and Technology (JohnWiley & Sons, USA, 2003).

10.
Navjot Khaira and Tejinder Singh, Proceedings of International Conference on Computing Sciences (2013).

11.
Jorge M. Cabral, Andrew S. Holmes, Proceedings of IEEE MELECON (Malaga, Spain, 2006). [DOI: http://dx.doi.org/10.1109/melcon.2006.1653095] crossref(new window)

12.
M. M. Shalaby, M. A. Abdelmoneum, and K. Saitou, IEEE Transactions on Industrial Electronics, 56, 1022 (2009). [DOI: http://dx.doi.org/10.1109/TIE.2009.2014671] crossref(new window)

13.
R. Robin, S. Touati, K. Segueni, O. Millet, and L. Buchaillot, Proceedings of Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (Nice, France, 2008) p. 56. [DOI: http://dx.doi.org/10.1109/dtip.2008.4752952] crossref(new window)

14.
C. Goldsmith, J. Randall, S. Eshelman, T. H. Lin, D. Dennistor, S. Chen, and B. Norvell, IEEE MTT-S International Microwave Symposium Digest, (San Francisco, CA, 1996) p. 1141. [DOI: http://dx.doi.org/10.1109/mwsym.1996.511231] crossref(new window)

15.
C. L. Goldsmith, Z. Yao, S. Eshelman, and D. Denniston, IEEE Microwave Guided Wave Lett., 8, 269 (1998). [DOI: http://dx.doi.org/10.1109/75.704410] crossref(new window)

16.
Z. J. Yao, S. Chen, S. Eshelman, D. Denniston, and C. L. Goldsmith, IEEE J. Microelectromech. Systems, 8, 129 (1999). [DOI: http://dx.doi.org/10.1109/84.767108] crossref(new window)

17.
D. Bansal, A. Kumar, A. Sharma, P. Kumar and K. J. Rangra, Microsyst Technol, 20, 337 (2013). [DOI: http://dx.doi.org/10.1007/s00542-013-1812-1]