Publisher : The Korean Institute of Electrical and Electronic Material Engineers
DOI : 10.4313/TEEM.2016.17.2.92
Title & Authors
A Disparate Low Loss DC to 90 GHz Wideband Series Switch Gogna, Rahul; Jha, Mayuri; Gaba, Gurjot Singh; Singh, Paramdeep;
This paper presents design and simulation of wide band RF microswitch that uses electrostatic actuation for its operation. RF MEMS devices exhibit superior high frequency performance in comparison to conventional devices. Similar techniques that are used in Very Large Scale Integration (VLSI) can be employed to design and fabricate MEMS devices and traditional batch-processing methods can be used for its manufacturing. The proposed switch presents a novel design approach to handle reliability concerns in MEMS switches like dielectric charging effect, micro welding and stiction. The shape has been optimized at actuation voltage of 14-16 V. The switch has an improved restoring force of 20.8 μN. The design of the proposed switch is very elemental and primarily composed of electrostatic actuator, a bridge membrane and coplanar waveguide which are suspended over the substrate. The simple design of the switch makes it easy for fabrication. Typical insertion and isolation of the switch at 1 GHz is -0.03 dB and -71 dB and at 85 GHz it is -0.24 dB and -29.8 dB respectively. The isolation remains more than - 20 db even after 120 GHz. To our knowledge this is the first demonstration of a metal contact switch that shows such a high and sustained isolation and performance at W-band frequencies with an excellent figure-of merit (fc=1/2.pi.Ron.Cu =1,900 GHz). This figure of merit is significantly greater than electronic switching devices. The switch would find extensive application in wideband operations and areas where reliability is a major concern.
C. Bozler, R. Drangmeister, S. Duffy,M. Gouker, J. Knecht, L. Kushner, R. Parr, S. Rabe, and L. Travis, IEEE MTT-S Int. Microwave Symp., 153 (2000).
N. E. McGruer, P. M. Zavracky, R. Morrison, S. Majumder, D. Potter, and M. Schirmer, Sensor Expo, (Cleveland, U.S.A., 1999).
M. Kim, J. B. Hacker, R. E. Mihailovich, and J. F. DeNatale, IEEE Microwave Wireless Compon. Lett., 11, 56 (2001). [DOI: http://dx.doi.org/10.1109/7260.914301]
C. L. Goldsmith, J. Randall, S. Eshelman, T. H. Lin, D. Denniston, S. Chen, and B. Norvell, IEEE MTT-S Int. Microwave Symp. Dig., 1141 (1996). [DOI: http://dx.doi.org/10.1109/mwsym.1996.511231]
C. L. Goldsmith, Z. Yao, S. Eshelman, and D. Denniston, IEEE Microwave Guided Wave Lett., 269 (1998). [DOI: http://dx.doi.org/10.1109/75.704410]
S. Pacheco, C. T. Nguyen, and L. P. B. Katehi, IEEE MTT-S Int. Microwave Symp. Dig., 1569 (1998). [DOI: http://dx.doi.org/10.1109/mwsym.1998.700675]
J. B. Muldavin and G. M. Rebeiz, IEEE Microwave Wireless Compon. Lett., 11, 373 (2001). [DOI: http://dx.doi.org/10.1109/7260.950765]
S. C. Shen, D. Caruth, and M. Feng, Proc. IEEE GaAs IC Symp., 161 (2000).
G. M. Rebeiz, RF MEMS Theory, Design and Technology (JohnWiley & Sons, USA, 2003).
Navjot Khaira and Tejinder Singh, Proceedings of International Conference on Computing Sciences (2013).
Jorge M. Cabral, Andrew S. Holmes, Proceedings of IEEE MELECON (Malaga, Spain, 2006). [DOI: http://dx.doi.org/10.1109/melcon.2006.1653095]
M. M. Shalaby, M. A. Abdelmoneum, and K. Saitou, IEEE Transactions on Industrial Electronics, 56, 1022 (2009). [DOI: http://dx.doi.org/10.1109/TIE.2009.2014671]
R. Robin, S. Touati, K. Segueni, O. Millet, and L. Buchaillot, Proceedings of Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (Nice, France, 2008) p. 56. [DOI: http://dx.doi.org/10.1109/dtip.2008.4752952]
C. Goldsmith, J. Randall, S. Eshelman, T. H. Lin, D. Dennistor, S. Chen, and B. Norvell, IEEE MTT-S International Microwave Symposium Digest, (San Francisco, CA, 1996) p. 1141. [DOI: http://dx.doi.org/10.1109/mwsym.1996.511231]
C. L. Goldsmith, Z. Yao, S. Eshelman, and D. Denniston, IEEE Microwave Guided Wave Lett., 8, 269 (1998). [DOI: http://dx.doi.org/10.1109/75.704410]
Z. J. Yao, S. Chen, S. Eshelman, D. Denniston, and C. L. Goldsmith, IEEE J. Microelectromech. Systems, 8, 129 (1999). [DOI: http://dx.doi.org/10.1109/84.767108]
D. Bansal, A. Kumar, A. Sharma, P. Kumar and K. J. Rangra, Microsyst Technol, 20, 337 (2013). [DOI: http://dx.doi.org/10.1007/s00542-013-1812-1]