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Improvement on the Stability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using Amorphous Oxide Multilayer Source/Drain Electrodes
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 Title & Authors
Improvement on the Stability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using Amorphous Oxide Multilayer Source/Drain Electrodes
Lee, Sang Yeol;
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 Abstract
In order to find suitable source and drain (S/D) electrodes for amorphous InGaZnO thin film transistors (a-IGZO TFTs), the specific contact resistance of interface between the channel layers and various S/D electrodes, such as Ti/Au, a-IZO and multilayer of a-IGZO/Ag/a-IGZO, was investigated using the transmission line model. The a-IGZO TFTs with a-IGZO/Ag/a-IGZO of S/D electrodes had good performance and low contact resistance due to the homo-junction with channel layer. The stability was measured with different electrodes by a positive bias stress test. The result shows the a-IGZO TFTs with a-IGZO/Ag/a-IGZO electrodes were more stable than other devices.
 Keywords
Amorphous oxide semiconductor;Source and drain electrode;a-IGZO;Transparent conductive oxide;
 Language
English
 Cited by
 References
1.
K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature, 432, 488 (2004). [DOI: http://dx.doi.org/10.1038/nature03090] crossref(new window)

2.
K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, Science, 23, 1269 (2003). [DOI: http://dx.doi.org/10.1126/science.1083212]

3.
J. S. Park, K. S. Kim, Y. G. Park, Y. G. Mo, H. D. Kim, and J. K. Jeong, Adv. Mater., 21, 329 (2009). [DOI: http://dx.doi.org/10.1002/adma.200802246] crossref(new window)

4.
E. Chong, S. H. Kim, and S. Y. Lee, Appl. Phys. Lett., 97, 252112 (2010). [DOI: http://dx.doi.org/10.1063/1.3530453 crossref(new window)

5.
K. H. Choi, Y. Y. Choi, J. A Jeong, H. K. Kim, and S. Jeon, Electrochemical and Solid-State Letters, 14, 152 (2011). [DOI: http://dx.doi.org/10.1149/1.3533436] crossref(new window)

6.
P. Barquinha, A. M. Vilà, G. Gonçalves, L. Pereira, R. Martins, J. R. Morante, and E. Fortunato, IEEE Trans. Elec. Dev., 55, 4 (2008). [DOI: http://dx.doi.org/10.1109/TED.2008.916717] crossref(new window)

7.
K. Nomura, T. Kamiya, H. Yanagi, E. Ikenaga, K. Yang, K. Kobayashi, M. Hirano, and H. Hosono, Appl. Phys. Lett., 92, 202117 (2008). [DOI: http://dx.doi.org/10.1063/1.2927306] crossref(new window)

8.
R. B. M. Crossa and M. M. De Souza, Appl. Phys. Lett., 89, 263513 (2006). [DOI: http://dx.doi.org/10.1063/1.2425020] crossref(new window)

9.
K. Jeon, C. Kim, I. Song, J. Park, S. Kim, S. Kim, Y. Park, J. H. Park, S. Lee, D. M. Kim, and D. H. Kim, Appl. Phys. Lett., 93, 182102 (2008). [DOI: http://dx.doi.org/10.1063/1.3013842] crossref(new window)

10.
S. Lee, H. Park, and D. C. Paine, J. Appl. Phys., 109, 063702 (2011). [DOI: http://dx.doi.org/10.1063/1.3549810] crossref(new window)

11.
R. B. M. Cross and M.M.De. Souza, Appl. Phys. Lett., 89, 263513 (2006). [DOI: http://dx.doi.org/10.1063/1.2425020] crossref(new window)

12.
J. K. Jeong, H. W. Yang, J. H. Jeong, Y. G. Mo, and H. D. Kim, Appl. Phys. Lett., 93, 123508 (2008). [DOI: http://dx.doi.org/10.1063/1.2990657] crossref(new window)

13.
S. Y. Lee, Trans. Electr. Electron. Mater., 16, 139 (2015). [DOI: http://dx.doi.org/10.4313/TEEM.2015.16.3.139] crossref(new window)

14.
T. Minami, T. Miyata, and T. Yamamoto, Surface and Coatings Technology, 108-109, 583-587 (1998). [DOI: http://dx.doi.org/10.1016/S0257-8972(98)00592-1] crossref(new window)

15.
H. T. Caon, Z. L. Pein, X. B. Zhangn, J. Gongl, C. Sunl, and L. S. Wen, Acta Metallurgica Sinica(English Letters), 18, 356 (2005).