JOURNAL BROWSE
Search
Advanced SearchSearch Tips
facebook(new window)  Pirnt(new window) E-mail(new window) Excel Download
  • Journal title :
  • Volume , Issue ,  , pp.-
  • Publisher :
  • DOI :
 Title & Authors

 
 Keywords
 Language
 Cited by
 References
1.
Black, A., Medina, J., Pineiro, A. and Dieguez, E. (2012), "Optimizing seeded casting of mono-like silicon crystals through numerical simulation", J. Crystal Grow., 353(1), 12-16. crossref(new window)

2.
Chen, J.C., Teng, Y.Y., Wun, W.T., Lu, C.W., Chen, H.I., Chen, C.Y. and Lan, W.C. (2011), "Numerical simulation of oxygen transport during the CZ silicon crystal growth process", J. Crystal Grow., 318(1), 318-323. crossref(new window)

3.
Chen, L. and Dai, B. (2012), "Optimization of power consumption on silicon directional solidification system by using numerical simulations", J. Crystal Grow., 354(1), 86-92. crossref(new window)

4.
Devulapalli, B. and Kulkarni, M.S. (2009), "Modeling multi-crystalline silicon growth in directional solidification systems", ECS Trans., 18(1), 1023-1029.

5.
Demina, S.E. and Kalaev, V.V. (2011), "3D unsteady computer modeling of industrial scale Ky and Cz sapphire crystal growth", J. Crystal Grow., 320(1), 23-27. crossref(new window)

6.
Fujiwara, K., Pan, W. and Sawada, K. (2006), "Directional growth method to obtain high quality polycrystalline silicon from its melt", J. Crystal Grow., 292(2), 282-285. crossref(new window)

7.
Kuliev, A.T., Durnev, N.V. and Kalaev V.V. (2007), "Analysis of 3D unsteady melt flow and crystallization front geometry during a casting process for silicon solar cells", J. Crystal Grow., 303(1), 236-240. crossref(new window)

8.
Lin, C.H., Chen, P.W. and Chen Ching-Yao (2011), "Simulations of silicon Cz growth in a cusp magnetic field", Magnetohydrodynamics, 47(1), 17-28.

9.
Li, Z.Y., Liu, L., Ma, W.C. and Kakimoto, K. (2011a), "Effects of argon flow on heat transfer in a directional solidification process for silicon solar cells", J. Crystal Grow., 318(1), 298-303. crossref(new window)

10.
Li, Z.Y., Liu, L., Ma, W.C. and Kakimoto, K. (2011b), "Effects of argon flow on impurities transport in a directional solidification furnace for silicon solar cells", J. Crystal Grow., 318(1), 304-312. crossref(new window)

11.
Miyazawa, H., Liu, L. and Kakimoto, K. (2008), "Numerical analysis of influence of crucible shape on interface shape in a unidirectional solidification process", J. Crystal Grow., 310(6), 1142-1147. crossref(new window)

12.
Miyazawa, H., Liu, L. and Kakimoto, K. (2009), "Numerical investigation of the influence of material property of a crucible on interface shape in a unidirectional solidification process", Crystal Grow. Des., 9(1), 267-272. crossref(new window)

13.
Newman, R.C. (1996), "Light impurities and their interactions in silicon", Mater. Sci. Eng.: B, 36(1-3), 1-12.

14.
Noghabi, O.A., M'Hamdi, M. and Jomaa, M. (2011), "Effect of crystal and crucible rotations on the interface shape of Czochralski grown silicon single crystals", J. Crystal Grow., 318(1), 173-177. crossref(new window)

15.
Nakano, S., Gao, B. and Kakimoto, K. (2013), "Relationship between oxygen impurity distribution in multi-crystalline solar cell silicon and the use of top and side heaters during manufacture", J. Crystal Grow., 375, 62-66 crossref(new window)

16.
Noghabi, O.A., Jomaa, M. and M'hamdi, M. (2013), "Analysis of W-shape melt/crystal interface formation in Czochralski silicon crystal growth", J. Crystal Grow., 362, 77-82. crossref(new window)

17.
Shimura, F. (1989), "Semiconductor silicon crystal technology", Academic press, San Diego, St. California, USA.

18.
Shur, J.W., Kang, B.K., Moon, S.J., So, W.W. and Yoon, D.H. (2011), "Growth of multi-crystalline silicon ingot by improved directional solidification process based on numerical simulation", Solar Energy Mater. Solar Cell., 95 (12), 3159-3164. crossref(new window)

19.
STR Group (2012), Private Communications.

20.
Teng, Y.Y., Chen, J.C., Lu, C.W. and Chen, C.Y. (2010), "The carbon distribution in multi-crystalline silicon ingots grown using the directional solidification process", J. Crystal Grow., 312(8), 1282-1290. crossref(new window)

21.
Teng, Y.Y., Chen, J.C., Lu, C.W., Chen, H.I., Hsu, C. and Chen, C.Y. (2011),"Effects of the furnace pressure on oxygen and silicon oxide distributions during the growth of multi-crystalline silicon ingots by the directional solidification process", J. Crystal Grow., 318(1), 224-229. crossref(new window)

22.
Teng Y.Y. (2011), "Investigation of thermal-fluid and impurity concentration distributions for growing the solar multi-crystalline Si ingots", Ph. D thesis, National Central University, Taiwan.

23.
Teng, Y.Y., Chen, J.C., Huang, C.C., Lu, C.W., Wun, W.T. and Chen C.Y. (2012), "Numerical investigation of the effect of heat shield shape on the oxygen impurity distribution at the crystal-melt interface during the process of Czochralski silicon crystal growth", J. Crystal Grow., 352(1), 167-172. crossref(new window)

24.
Teng, Y.Y., Chen, J.C., Lu, C.W. and Chen, C.Y. (2012),"Numerical investigation of oxygen impurity distribution during multi-crystalline silicon crystal growth using a gas flow guidance device", J. Crystal Grow., 360(1), 12-17. crossref(new window)

25.
Teng, Y.Y., Chen, J.C., Huang, B.S. and Chang, C.H. (2014), "Numerical simulation of impurity transport under the effect of a gas flow guidance device during the growth of multi-crystalline silicon ingots by the directional solidification process", J. Crystal Grow., 385(1), 1-8. crossref(new window)

26.
Zhang, Z.Q., Huang, Q., Huang, Z.F., Li, B.W. and Chen, X. (2011), "Analysis of microcrystal formation in DS-silicon ingot", Sci. China: Technol. Sci., 54(6), 1475-1480.