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Atomic Layer Deposition of HfO2 Films on Ge
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 Title & Authors
Atomic Layer Deposition of HfO2 Films on Ge
Cho, Young Joon; Chang, Hyo Sik;
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 Abstract
We investigated the growth characteristics and interfacial properties of films deposited on Ge substrate through atomic layer deposited (ALD) by using an in-situ medium energy ion scattering analysis. The growth kinetics of grown on a substrate through ALD is similar to that grown on an substrate. However, the incubation period of deposition on Ge is shorter than that on Si. The grown on the GeO/Ge substrate shows a significant diffusion of Hf atoms into the substrate interface and GeO volatilization after annealing at . The presence of low-quality Ge oxide or suboxide may degrade the electrical performance of device.
 Keywords
Atomic layer deposition;;Ge;GeO;Growth;Annealing;
 Language
English
 Cited by
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