Advanced SearchSearch Tips
Atomic Layer Deposition of HfO2 Films on Ge
facebook(new window)  Pirnt(new window) E-mail(new window) Excel Download
 Title & Authors
Atomic Layer Deposition of HfO2 Films on Ge
Cho, Young Joon; Chang, Hyo Sik;
  PDF(new window)
We investigated the growth characteristics and interfacial properties of films deposited on Ge substrate through atomic layer deposited (ALD) by using an in-situ medium energy ion scattering analysis. The growth kinetics of grown on a substrate through ALD is similar to that grown on an substrate. However, the incubation period of deposition on Ge is shorter than that on Si. The grown on the GeO/Ge substrate shows a significant diffusion of Hf atoms into the substrate interface and GeO volatilization after annealing at . The presence of low-quality Ge oxide or suboxide may degrade the electrical performance of device.
Atomic layer deposition;;Ge;GeO;Growth;Annealing;
 Cited by
C. O. Chui, H. Kim, D. Chi, B. B. Triplett, P. C. Mclntyre, and K. C. Saraswat, Tech. Dig. Int. Electron Devices Meet., 437 (2002).

H. Shang, H. Okorn-Schmidt, K. K. Chan, M. Copel, J. A. Ott, P. M. Ott, P. M. Kozlowsi, S. E. Steen, H. -S. P. Wong, E. C. Jones, and W. E. Haensch, Tech. Dig. -Int. Electron Devices Meet., 441 (2002).

W. -H. Kim, B. Kim, and H. Kim, J. Korean Vac. Soc. 19, 14 (2010). crossref(new window)

S. Swaminathan, Y. Sun, P. Pianetta, and P. C. McIntyre, J. Appl. Phys. 110, 094105 (2011). crossref(new window)

W. P. Bai, N. Lu, J. Liu, A. Ramirez, D. L. Kwong, D. Wristers, A. Ritenour, L. Lee, and D. Antoniadis, VLSI Tech. Dig, 121 (2003).

E. P. Gusev, H. C. Lu, T. Gustafsson, and E. Garfunkel, Phys. Rev. B 52, 1759 (1995). crossref(new window)

H. S. Chang, H. Hwang, M.-H. Cho and D.W. Moon, Appl. Phys. Lett. 86, 031906 (2005). crossref(new window)

M. Caymaxa, S. Van Elshocht, M. Houssa, A. Delabie, T. Conard, M. Meuris, M.M. Heyns, A. Dimoulas, S. Spiga, M. Fanciulli, J.W. Seo, L.V. Goncharova, Materials Science and Engineering B 135, 256 (2006). crossref(new window)

E. Golias, L. Tsetseris, A. Dimoulas and S. T. Pantelides, Microelectron.Eng. 88, 427 (2011). crossref(new window)

K. Kita, S. Suzuki, H. Nomura, T. Takahashi, T. Nishimura and A. Toriumi, Jpn. J. Appl. Phys. 47, 2349 (2008). crossref(new window)

H. Shang, K.L. Lee, P. Kozlowski, C. D'Emic, I. Babich, E. Sikorski, M. Ieong, H.S.P. Wong, K. Guarini and W. Haensch, IEEE Electron Device Lett. 25, 135 (2004). crossref(new window)

C. H. Huang, D. S. Yu, A. Chin, W. J. Chen, C. X. Zhu, M. F. Li, B. J. Cho, and D. L. Kwong, Tech. Dig. Int. Electron Devices Meet., 319 (2003).

M. -H. Cho, H. S. Chang, D. W. Moon, S. K. Kang, B. K. Min, D. -H. Ko, H. S. Kim, Paul C. McIntyre, J. H. Lee, J. H. Ku, and N. I. Lee, Appl. Phys. Lett. 84, 1171 (2004). crossref(new window)