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Fabrication Process of Single CuO Nanowire Devices
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 Title & Authors
Fabrication Process of Single CuO Nanowire Devices
Vu, Xuan Hien; Jo, Kwang-Min; Kim, Se-Yun; Lee, Joon-Hyung; Kim, Jeong-Joo; Heo, Young-Woo;
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 Abstract
One-dimensional nanostructures such as nanowires have been extensively investigated as a promising type of material for applications of nanoscale technology. The fabrication of single-nanowire devices are consequently important and interesting. This study introduced a feasible method for growing CuO nanowires on Cu foils. The nanowires had diameters of 10~150 nm and lengths of more than and were grown by means of thermal oxidation in a vacuum. They were entirely and uniformly grown over the Cu foil surfaces and could be extracted and dispersed in an ethanol solution for further purposes. In addition, a simple fabrication method for realizing device functionality from a single CuO nanowire was reported. Fabricated devices were carefully checked by field-emission scanning electron microscopy (SEM). The probability of the realization of a single-CuO-nanowire device relative to that of all other types was estimated to be around 25%. Finally, the I-V characteristics of the devices were analyzed.
 Keywords
Nanowire FET;CuO;Growth;Semiconductor device;
 Language
English
 Cited by
 References
1.
S. R. Gowda, A. L. M. Reddy, X. Zhan, and P. M. Ajayan, Nano Lett. 11, 3329 (2011). crossref(new window)

2.
Y. Hu, J. Zhou, P.-H. Yeh, Z. Li, T.-Y. Wei, and Z. L. Wang, Adv. Mater. 22, 3327 (2010). crossref(new window)

3.
F. Gu, L. Zhang, X. Yin, and L. Tong, Nano Lett. 8, 2757 (2008). crossref(new window)

4.
L. Liao, Z. Zhang, B. Yan, Z. Zheng, Q. L. Bao, T. Wu, C. M. Li, Z. X. Shen, J. X. Zhang, H. Gong, J. C. Li, and T. Yu, Nanotechnology 20, 085203 (2009). crossref(new window)

5.
I. Yavari, E. Sodagar, and M. Nematpour, Helv. Chim. Acta 97, 420 (2014). crossref(new window)

6.
L. Ben-Xia, W. Yuan-Yuan, and W. Yan-Fen, Acta Phys. Chim. Sin. 25, 2366 (2009).

7.
A. Aslani, and V. Oroojpour, Physica B406, 144 (2011).

8.
S. Liu, J. Tian, L. Wang, X. Qin, Y. Zhang, Y. Luo, A.M. Asiri, A.O. Al-Youbi, and X. Sun, Catal. Sci. Technol. 2, 813 (2012). crossref(new window)

9.
P. Poizot, S. Laruelle, S. Grugeon, L. Dupont, and J. M. Tarascon, Nature 407, 496 (2000). crossref(new window)

10.
S. Manna, K. Das, and S. K. De, ACS Appl. Mater. Interfaces 2, 1536 (2010). crossref(new window)

11.
X. Song, H. Yu, and S. Sun, J. Colloid Interface Sci. 289, 588 (2005). crossref(new window)

12.
S. Liu, J. Tian, L. Wang, Y. Luo and X. Sun, Catal. Sci. Technol. 2, 339 (2012). crossref(new window)

13.
X. Jiang, T. Herricks, and Y. Xia, Nano Lett. 2, 1333 (2002). crossref(new window)