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Numerical Modeling for GaN Deposition by MOCVD: Effects of the Gas Inlet
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 Title & Authors
Numerical Modeling for GaN Deposition by MOCVD: Effects of the Gas Inlet
Yang, Wonkyun; Joo, Junghoon;
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GaN deposition equipment and processes for the fabrication of white LEDs (Light Emitting Diode) using MOCVD (Metal Organic Chemical Vapor Deposition) were numerically modeled to analyze the effects of a reactive gas introduction strategy. The source gases, TMGa and , were injected from a shower head at the top of the chamber; the carrier gases, or , were introduced using two types of injection structures: vertical and horizontal. Wafers sat on the holder at a radial distance between 100 mm and 150 mm. The non-uniformity of the deposition rates for vertical and horizontal injection were 4.3% and 3.1%, respectively. In the case of using as a carrier gas instead of , the uniform deposition zone was increased by 20%.
Numerical modeling;GaN;MOCVD;Gas flow;
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S. Nakamura, T. Mukai, and M. Senoh, Appl. Phys. Lett., 174, 791 (1968).

B. Z. Qu, Q. S. Zhu, X. H. Sun, S. K. Wan, and Z. G. Wang, J. Vac. Sci. Technol. A 21, 838 (2003). crossref(new window)

H. Amano, M. Kito, K. Hiramatsu, and I. Akasaki, Jpn. J. Appl. Phys., Part 2 28, L212 (1989).

S. Nakanmura, N. Iwawa, M. Senoh, and T. Mukai, Jpn. J. Appl. Phys., Part 1 31, 1258 (1992).

J. A. Van Vechten, J. D. Zook, R. D. Homig, and B. Goldenberg, Jpn. J. Appl. Phys., Part 1 31, 3662 (1992).

L. Kadinski, V. merai, A. Parekh, J. Ramer, et. al., J. Cry. Growth, 261, 175 (2004). crossref(new window)

Y. Chuang and C. Chen, J. Taiwan Inst. Chem. Engr, 45, 254 (2014). crossref(new window)

K. Hong, W. Yang, J. Joo, S. Lee, and T. Lee, J. Kor. Inst. Surf. Eng. 43, 304 (2010). crossref(new window)

CFD-ACE+ User manual, CFD Research Corporation, 215 Wynn Drive, Huntsville, AL 35805, USA.

Theodoros G. Mihopoulos, Steven G. Hummel, and Klavs F. Jensen, J. Cryst. Growth. 195, 733 (1998). crossref(new window)