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Numerical Modeling for GaN Deposition by MOCVD: Effects of the Gas Inlet
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 Title & Authors
Numerical Modeling for GaN Deposition by MOCVD: Effects of the Gas Inlet
Yang, Wonkyun; Joo, Junghoon;
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GaN deposition equipment and processes for the fabrication of white LEDs (Light Emitting Diode) using MOCVD (Metal Organic Chemical Vapor Deposition) were numerically modeled to analyze the effects of a reactive gas introduction strategy. The source gases, TMGa and , were injected from a shower head at the top of the chamber; the carrier gases, or , were introduced using two types of injection structures: vertical and horizontal. Wafers sat on the holder at a radial distance between 100 mm and 150 mm. The non-uniformity of the deposition rates for vertical and horizontal injection were 4.3% and 3.1%, respectively. In the case of using as a carrier gas instead of , the uniform deposition zone was increased by 20%.
Numerical modeling;GaN;MOCVD;Gas flow;
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