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Numerical Modeling of an Inductively Coupled Plasma Based Remote Source for a Low Damage Etch Back System
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 Title & Authors
Numerical Modeling of an Inductively Coupled Plasma Based Remote Source for a Low Damage Etch Back System
Joo, Junghoon;
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Fluid model based numerical analysis is done to simulate a low damage etch back system for 20 nm scale semiconductor fabrication. Etch back should be done conformally with very high material selectivity. One possible mechanism is three steps: reactive radical generation, adsorption and thermal desorption. In this study, plasma generation and transport steps are analyzed by a commercial plasma modeling software package, CFD-ACE+. Ar + ICP was used as a model and the effect of reactive gas inlet position was investigated in 2D and 3D. At 200~300 mTorr of gas pressure, separated gas inlet scheme is analyzed to work well and generated higher density of F and radicals in the lower chamber region while suppressing ions reach to the wafer by a double layer conducting barrier.
numerical modeling;inductively coupled plasma;etch back;gas inlet position;CFD-ACE+;
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