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Electronic, Optical and Electrical Properties of Nickel Oxide Thin Films Grown by RF Magnetron Sputtering
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 Title & Authors
Electronic, Optical and Electrical Properties of Nickel Oxide Thin Films Grown by RF Magnetron Sputtering
Park, Chanae; Kim, Juhwan; Lee, Kangil; Oh, Suhk Kun; Kang, Hee Jae; Park, Nam Seok;
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 Abstract
Nickel oxide (NiO) thin films were grown on soda-lime glass substrates by RF magnetron sputtering method at room temperature (RT), and they were post-annealed at the temperatures of , , and for 30 minutes in vacuum. The electronic structure, optical and electrical properties of NiO thin films were investigated using X-ray photoelectron spectroscopy (XPS), reflection electron energy spectroscopy (REELS), UV-spectrometer and Hall Effect measurements, respectively. XPS results showed that the NiO thin films grown at RT and post annealed at temperatures below had the NiO phase, but, at , the nickel metal phase became dominant. The band gaps of NiO thin films post annealed at temperatures below were about 3.7 eV, but that at should not be measured clearly because of the dominance of Ni metal phase. The NiO thin films post-annealed at temperatures below showed p-type conductivity with low electrical resistivity and high optical transmittance of 80% in the visible light region, but that post-annealed at showed n-type semiconductor properties, and the average transmittance in the visible light region was less than 42%. Our results demonstrate that the post-annealing plays a crucial role in enhancing the electrical and optical properties of NiO thin films.
 Keywords
NiO thin film;RF magnetron sputtering;XPS;REELS;Optical properties;Electrical Properties;
 Language
English
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Effect of precursor solutions on the structural and optical properties of sprayed NiO thin films, Materials Science in Semiconductor Processing, 2017, 64, 32  crossref(new windwow)
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