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Direct Growth of Graphene on Insulating Substrate by Laminated (Au/Ni) Catalyst Layer
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 Title & Authors
Direct Growth of Graphene on Insulating Substrate by Laminated (Au/Ni) Catalyst Layer
Ko, Yong Hun; Kim, Yooseok; Jung, Daesung; Park, Seung Ho; Kim, Ji Sun; Shim, Jini; Yun, Hyeju; Song, Wooseok; Park, Chong-Yun;
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A direct growth method of graphene on insulating substrate without catalyst etching and transfer process was developed using Au/Ni/a-C catalyst system. During the growth process, behavior of the Au/Ni catalyst was investigated using EDX, XPS, SEM, and Raman spectroscopy. The Au/Ni catalyst layer was evaporated during growth process of graphene. The graphene film was composed mono-layer flakes. The transmittance of the graphene film was ~80.6%.
Graphene;Direct growth;Eutectic temperature;Amorphous carbon;
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