Diamagnetic Shift of a InGaP-AlInGaP Semiconductor Single Quantum Well under Pulsed-magnetic Fields

Title & Authors
Diamagnetic Shift of a InGaP-AlInGaP Semiconductor Single Quantum Well under Pulsed-magnetic Fields
Choi, B.K.; Kim, Yongmin; Song, J.D.;

Abstract
Application of magnetic fields is important to characterize the carrier dynamics in semiconductor quantum structures. We performed photoluminescence (PL) measurements from an InGaP-AlInGaP single quantum well under pulsed magnetic fields to 50 T. The zero field interband PL transition energy matches well with the self-consistent Poisson-$\small{Schr{\ddot{o}}dinger}$ equation. We attempted to analyze the dimensionality of the quantum well by using the diamagnetic shift of the magnetoexciton. The real quantum well has finite thickness that causes the quasi-two-dimensional behavior of the exciton diamagnetic shift. The PL intensity diminishes with increasing magnetic field because of the exciton motion in the presence of magnetic field.
Keywords
Photoluminescence;Magnetic field;Quantum well;Diamagnetic shift;
Language
English
Cited by
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