JOURNAL BROWSE
Search
Advanced SearchSearch Tips
The Effects of Thermal Decomposition of Tetrakis-ethylmethylaminohafnium (TEMAHf) Precursors on HfO2 Film Growth using Atomic Layer Deposition
facebook(new window)  Pirnt(new window) E-mail(new window) Excel Download
 Title & Authors
The Effects of Thermal Decomposition of Tetrakis-ethylmethylaminohafnium (TEMAHf) Precursors on HfO2 Film Growth using Atomic Layer Deposition
Oh, Nam Khen; Kim, Jin-Tae; Ahn, Jong-Ki; Kang, Goru; Kim, So Yeon; Yun, Ju-Young;
  PDF(new window)
 Abstract
The ALD process is an adequate technique to meet the requirements that come with the downscaling of semiconductor devices. To obtain thin films of the desired standard, it is essential to understand the thermal decomposition properties of the precursors. As such, this study examined the thermal decomposition properties of TEMAHf precursors and its effect on the formation of thin films. FT-IR experiments were performed before deposition in order to analyze the thermal decomposition properties of the precursors. The measurements were taken in the range of . At temperatures higher than , there was a rapid decrease in the absorption peaks arising from vibration of C-H stretching. This showed that the precursors experienced rapid decomposition at around . thin films were successfully deposited by Atomic Layer Deposition (ALD) at intervals between to ; the deposited films were characterized using a reflectometer, X-ray photoelectron spectroscopy (XPS), Grazing Incidence X-ray Diffraction (GIXRD), and atomic force microscopy (AFM). The results illustrate the relationship between the thermal decomposition temperature of TEMAHf and properties of thin films.
 Keywords
Atomic Layer Deposition;;FT-IR;TEMAHf;Thermal decomposition;
 Language
English
 Cited by
 References
1.
G. D. Wilk, R. M. Wallace, and J. M. Anthony, High-$\kappa$ gate dielectrics: Current status and materials properties considerations. Journal of applied physics, 89(10), 5243-5275 (2001). crossref(new window)

2.
D. M. Hausmann, E. Kim, J. Becker, and R. G. Gordon, Atomic layer deposition of hafnium and zirconium oxides using metal amide precursors. Chemistry of materials, 14(10), 4350-4358 (2002). crossref(new window)

3.
Y. Ohshita, A. Ogura, A. Hoshino, S. Hiiro, and T. Suzuki, and H. Machida, Using tetrakis-diethylamido-hafnium for $HfO_2$ thin-film growth in low-pressure chemical vapor deposition. Thin Solid Films, 406(1), 215-218 (2002). crossref(new window)

4.
T. H. Moon, M. H. Ham, M. S. Kim, I. Yun, and J. M. Myoung, Growth and characterization of MOMBE grown $HfO_2$. Applied surface science, 240(1), 105-111 (2005). crossref(new window)

5.
X. Liu, S. Ramanathan, and T. E. Seidel, Atomic layer deposition of hafnium oxide thin films from tetrakis (dimethylamino) hafnium (TDMAH) and ozone. In MRS Proceedings (Vol. 765, pp. D3-8). Cambridge University Press (2003).

6.
D. H. Triyoso, R. I. Hegde, B. E. White, and P. J. Tobin, Physical and electrical characteristics of atomic-layer-deposited hafnium dioxide formed using hafnium tetrachloride and tetrakis (ethylmethylaminohafnium). Journal of applied physics, 97(12), 4107 (2005).

7.
G.. Carta, N. El Habra, G. Rossetto, G. Torzo, L. Crociani, M. Natali, and S. Kaciulis, Growth of hafnium dioxide thin films by MOCVD using a new series of cyclopentadienyl hafnium compounds. Chemical Vapor Deposition, 13(11), 626-632 (2007). crossref(new window)

8.
D. Barreca, A. Milanov, R. A. Fischer, A. Devi, and E. Tondello, Hafnium oxide thin film grown by ALD: An XPS study. Surface Science Spectra, 14(1), 34-40 (2007). crossref(new window)

9.
P. D. Kirsch, M. A. Quevedo-Lopez, H. J. Li, Y. Senzaki, J. J. Peterson, S. C. Song, and P. Y. Hung, Nucleation and growth study of atomic layer deposited $HfO_2$ gate dielectrics resulting in improved scaling and electron mobility. Journal of applied physics, 99(2), 3508 (2006).

10.
X. Liu, S. Ramanathan, A. Longdergan, A. Srivastava, E. Lee, T. E. Seidel, and R. G. Gordon, ALD of hafnium oxide thin films from tetrakis (ethylmethylamino) hafnium and ozone. Journal of The Electrochemical Society, 152(3), G213-G219 (2005). crossref(new window)