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EM Algorithm for Designing Soft-Decision Binary Error Correction Codes of MLC NAND Flash Memory
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 Title & Authors
EM Algorithm for Designing Soft-Decision Binary Error Correction Codes of MLC NAND Flash Memory
Kim, Sung-Rae; Shin, Dong-Joon;
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 Abstract
In this paper, we present two signal processing techniques for designing binary error correction codes for Multi-Level Cell(MLC) NAND flash memory. MLC NAND flash memory saves the non-binary symbol at each cell and shows asymmetric channel LLR l-density which makes it difficult to design soft-decision binary error correction codes such as LDPC codes and Polar codes. Therefore, we apply density mirroring and EM algorithm for approximating the MLC NAND flash memory channel to the binary-input memoryless channel. The density mirroring processes channel LLRs to satisfy roughly all-zero codeword assumption, and then EM algorithm is applied to l-density after density mirroring for approximating it to mixture of symmetric Gaussian densities. These two signal processing techniques make it possible to use conventional code design algorithms, such as density evolution and EXIT chart, for MLC NAND flash memory channel.
 Keywords
Asymmetric channel;density mirroring;EM algorithm;flash memory;l-density;
 Language
Korean
 Cited by
1.
MLC 낸드 플래시 메모리 오류정정을 위한 고속 병렬 BCH 복호기 설계,최원정;이제훈;성원기;

한국콘텐츠학회논문지, 2016. vol.16. 3, pp.91-101 crossref(new window)
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