JOURNAL BROWSE
Search
Advanced SearchSearch Tips
Comparison of Passivation Property on Hydrogenated Silicon Nitrides whose Antireflection Properties are Identical
facebook(new window)  Pirnt(new window) E-mail(new window) Excel Download
 Title & Authors
Comparison of Passivation Property on Hydrogenated Silicon Nitrides whose Antireflection Properties are Identical
Kim, Jae Eun; Lee, Kyung Dong; Kang, Yoonmook; Lee, Hae-Seok; Kim, Donghwan;
  PDF(new window)
 Abstract
Silicon nitride () films made by plasma enhanced chemical vapor deposition (PECVD) are generally used as antireflection layers and passivation layers on solar cells. In this study, we investigated the properties of silicon nitride () films made by PECVD. The passivation properties of are focused on by making the antireflection properties identical. To make equivalent optical properties of silicon nitride films, the refractive index and thickness of the films are fixed at 2.0 and 90 nm, respectively. This limit makes it easier to evaluate silicon nitride film as a passivation layer in realistic application situations. Next, the effects of the mixture ratio of the process gases with silane () and ammonia () on the passivation qualities of silicon nitride film are evaluated. The absorption coefficient of each film was evaluated by spectrometric ellipsometry, the minority carrier lifetimes were evaluated by quasi-steady-state photo-conductance (QSSPC) measurement. The optical properties were obtained using a UV-visible spectrophotometer. The interface properties were determined by capacitance-voltage (C-V) measurement and the film components were identified by Fourier transform infrared spectroscopy (FT-IR) and Rutherford backscattering spectroscopy detection (RBS) - elastic recoil detection (ERD). In hydrogen passivation, gas ratios of 1:1 and 1:3 show the best surface passivation property among the samples.
 Keywords
silicon nitride;;pecvd;passivation;reflectance;
 Language
Korean
 Cited by
 References
1.
M.A.Green, Silicon Solar Cells Advanced Principles & Practice, p.32-54, University of New South Wales, Centre for Photovoltaic Devices and Systems, Sydney, (1995).

2.
J.-F. Lelievre, E. Fourmond, A. Kaminski, O. Palais, D. Ballutaud and M. Lemiti, Sol. Energy Mater. Sol. Cells, 93, 1281 (2009). crossref(new window)

3.
A. cuevas, M. J. Kerr and J. Schmdt, 3rd World Conference on Photovoltaic Energy Conversion, (2003).

4.
F. Duerinck and J. Szlufcik, Sol. Energy Mater. Sol. Cells, 72, 231 (2002). crossref(new window)

5.
S. Dutttagupta, F. Ma, B. Hoex, T. Mueller and A. G. Aberle, Energy Procedia, 15, 78 (2012). crossref(new window)

6.
A. E. Amrani, I. Menous, L. Mahiou, R. Tadjine and A. Lefgoum, Renew. Energy, 33, 2289 (2008). crossref(new window)

7.
M. A. Green, Solar Cells, p.161-164, B. Barbara, Prentice-Hall, Inc., USA, (1982).

8.
M. J-Szymacha, P. Boszkowicz and K. T-Smiech, Thin Solid Films, 520, 1308 (2011). crossref(new window)

9.
J. D. Moschner, J. Henze, J. Schmidt and R. Hezel, Prog. Photovot: Res. Appl., 12, 21 (2004).

10.
Y. Wan, K. R. Mclntosh and A. F. Thomson, AIP Advances, 3, 032113 (2013). crossref(new window)

11.
H. Mackel and R. Ludemann, J. Appl. Phys., 92, 2602 (2002). crossref(new window)

12.
K. D. Lee, Y. D. Kim, S. S. Dahiwale, H. Boo, S. Park, S. J. Tark and D. Kim, J. Korean Vac. Soc., 21, 29 (2012). crossref(new window)

13.
A. G. Aberle, Prog. Photovolt: Res. Appl., 8, 473 (2000).

14.
B. L. Sopori, X. Deng, J. P. Benner, A. Rohatgi, P. Sana, S. K. Estreicher, Y. K. Park and M. A. Roberson, Sol. Energy Mater. Sol. Cells, 41/42, 159 (1996). crossref(new window)