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Process design for solution growth of SiC single crystal based on multiphysics modeling
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 Title & Authors
Process design for solution growth of SiC single crystal based on multiphysics modeling
Yoon, Ji-Young; Lee, Myung-Hyun; Seo, Won-Seon; Shul, Yong-Gun; Jeong, Seong-Min;
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A top-seeded solution growth (TSSG) is a method of growing SiC single crystal from the Si melt dissolved the carbon. In this study, multiphysics modeling was conducted using COMSOL Multiphysics, a commercialized finite element analysis package, to get analytic results about electromagnetic analysis, heat transfer and fluid flow in the Si melt. Experimental results showed good agreements with simulation data, which supports the validity of the simulation model. Based on the understanding about solution growth of SiC and our set-up, crystal growth was conducted on off-axis 4H-SiC seed crystal in the temperature range of . The grown layer showed good crystal quality confirmed with optical microscopy and high resolution X-ray diffraction, which also demonstrates the effectiveness of the multiphysics model to find a process condition of solution growth of SiC single crystal.
SiC;Crystal growth;Top seeded solution growth;Multiphysics modeling;Finite element analysis;
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Yole Development, "SiC2012", Silicon carbide market analysis, Yole development, France (2012).

A.A. Lebedev and V.E. Chelnokov, "Wide-gap semiconductors for high-power electronics", Semiconductors 33 (1999) 999. crossref(new window)

Y.M. Tairov and V.F. Tsvetkov, "Investigation of growth processes of ingots of silicon carbide single crystals", J. Cryst. Growth 43 (1978) 209. crossref(new window)

V.E. Chelnokov, A.L. Syrkin and V.A. Dmitriev, "Overview of SiC power electronics", Diam. Relat. Mater. 6 (1997) 1480. crossref(new window)

K. Kamei, K. Kusunoki, N. Yashiro, N. Okada, T. Tanaka and A. Yauchi, "Solution growth of single crystalline 6H, 4H-SiC using Si-Ti-C melt", J. Cryst. Growth 311 (2009) 855. crossref(new window)

H.-Y. Shin, J.-H. Im and J.-I. Im, "Numerical analysis of sapphire crystal growth process using Ky and CZ method", J. Korean Cryst. Growth Cryst. Technol. 23 (2013) 59. crossref(new window)

COMSOL: (accessed 15. 07. 01).

J.H. Kim, Y.H. Park and Y.C. Lee, "Analysis of melt flows and remelting phenomena through numerical simulations during the kyropoulos sapphire single crystal growth", J. Korean Cryst. Growth Cryst. Technol. 23 (2013) 129. crossref(new window)

F. Mercier, J.-M. Deddulle, D. Chaussende and M. Pons, "Coupled heat transfer and fluid dynamics modeling of high-temperature SiC solution growth", J. Cryst. Growth 312 (2010) 155. crossref(new window)

ACerS-NIST Phase Equilibria Diagrams Version 3.2.1 CD-ROM Database, NIST Standard Reference Database 31; phase-equilibria-diagrams (accessed 15.07.01).

F. Mercier and S.Nishizawa, "Solution growth of SiC from silicon melts: Influence of the alternative magnetic field on fluid dynamics", J. Cryst. Growth 318 (2011) 385. crossref(new window)

J. Lefebure, J.-M. Deddulle, T. Ouisse and D. Chaussende, "Modeling of the growth rate during top seeded solution growth of SiC using pure silicon as a solvent", Cryst. Growth Des. 12 (2011) 909.

F. Mercier and S. Nishizawa, "Numerical investigation of the growth rate enhancement of SiC crystal growth from silicon melts", Jpn. J. Appl. Phys. 50 (2011) 5603.

K. Danno, H. Saitoh, A. Seki, H. Daikoku, Y. Fujiwara, T. Ishii, H. Sakamoto and Y. Kawaii, "High-speed growth of high-quality 4H-SiC bulk by solution growth using Si-Cr based melt", Mater. Sci. Forum 645 (2010) 13.