Publisher : The Korea Association of Crystal Growth
DOI : 10.6111/JKCGCT.2016.26.2.053
Title & Authors
A study on the SiC single crystal growth conditions by the resistance heating method Kang, Seung-Min;
6H-SiC single crystals were grown by using a resistance heating system. It was recognized that the growth behavior was different according to the different growth temperatures. It was revealed that the temperatures at the source feeding and at the crystal growth position had to be controlled independently. In this report, the effect of growth temperature on the SiC crystal growth was discussed.