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A study on the SiC single crystal growth conditions by the resistance heating method
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 Title & Authors
A study on the SiC single crystal growth conditions by the resistance heating method
Kang, Seung-Min;
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 Abstract
6H-SiC single crystals were grown by using a resistance heating system. It was recognized that the growth behavior was different according to the different growth temperatures. It was revealed that the temperatures at the source feeding and at the crystal growth position had to be controlled independently. In this report, the effect of growth temperature on the SiC crystal growth was discussed.
 Keywords
SiC;Resistance heating;Single crystal;Growth behavior;Growth condition;
 Language
Korean
 Cited by
 References
1.
R. Gerhardt, "Properties and applications of silicon carbide" (InTech, Croatia, 2011) p. 361.

2.
S.M. Kang, "Step growth and defects formation on growth interface for SiC sublimation growth", J. Korean Cryst. Growth Cryst. Technol. 9 (1999) 558.

3.
S.M. Kang, "The study on the formation of growth steps in the sublimation growth of SiC single crystals", J. Korean Cryst. Growth Cryst. Technol. 11 (2001) 1.

4.
G.P. Yin and S.M. Kang, "A study on the dependance of crucible dimension on AlN single crystal growth", J. Korean Cryst. Growth Cryst. Technol. 25 (2015) 1. crossref(new window)

5.
S.M. Kang, "A study on the crystalline phases of AlN single crystals grown by PVT method", J. Korean Cryst. Growth Cryst. Technol. 24 (2015) 54.