Advanced SearchSearch Tips
Dependance of hot-zone position on AlN single crystal growth by PVT method
facebook(new window)  Pirnt(new window) E-mail(new window) Excel Download
 Title & Authors
Dependance of hot-zone position on AlN single crystal growth by PVT method
Yin, Gyong-Phil; Kang, Seung-Min;
  PDF(new window)
AlN single crystals were grown by the PT (Physical vapor transport) method with position-changable induction coil. And the graphite crucible dimensioned was used on processing. The temperature was and ambient pressure was 150~1 Torr. And the hot-zone was changed according to times on growing for result comparison. When hot-zone by coil is located below far enough (> 40 mm) from AlN crystal concentration position, the as-grown crystals physical size is better () than another condition, but the condition-reproducibility was very poor. However the closer the distance between hot-zone and AlN growing posion, the smaller the size of as-grown crystal and the rarer the generation of the crystal nuclear, but the crystal growing condition is stable for quality. The best condition for both growth rate and quality is gained when the starting position of hot-zone coil is about 20 mm distance from growing position. For the best growth condition, the position of hot-zone is very sensitive factor and the further more the condition of speed of coil shift also must control.
AlN;Single crystal;Hot zone;PVT;Physical vapor transport method;Crystal size;
 Cited by
PVT(Physical Vapor Transport) 법으로 AlN 결정 성장에서 결정립의 성장 거동에 관한 연구,강승민;

한국결정성장학회지, 2016. vol.26. 4, pp.135-138 crossref(new window)
A study on the crystallite growth behavior in AlN crystal grown by PVT (Physical Vapor Transport) method, Journal of the Korean Crystal Growth and Crystal Technology, 2016, 26, 4, 135  crossref(new windwow)
R. Schlesser, R. Dalmaum and Z. Sitar, "Seeded frowth of AlN bulk single crystals by sublimation", J. Cryst. Growth 241 (2002) 416. crossref(new window)

S.M. Kang, "Growth of AlN crystals by the sublimation process", J. Korean Cryst. Growth Cryst. Technol. 18 (2008) 68.

S.M. Kang, "A study on the growth morphology of AlN crystals grown by a sublimation precess", J. Korean Cryst. Growth Cryst. Technol. 19 (2009) 242.

Z.G. Herro, D. Zhuang, R. Schlesser and Z. Sitar, "Growth of AlN single crystalline boules", J. Cryst. Growth 312 (2010) 2515.

V. Noveski, R. Schlesser, S. Mahajan, S. Beaudoin and Z. Sitar, "Mass transfer in AlN crystal growth at high temperature", J. Cryst. Growth 264 (2004) 369. crossref(new window)

M. Bickermann, B.M. Epelbaum and A. Winnacker, "Characterization of bulk AlN with low oxygen content", J. Cryst. Growth 269 (2003) 432.

M. Miyanaga, N. Mizuhara, S. Fujiwara, M Shimazu, H. Nakahata and T. Kawase, "Evaluation of AlN singlecrystal grown by sublimation method", J. Cryst. Growth 300 (2007) 45. crossref(new window)