Advanced SearchSearch Tips
Effect of pressure and temperature on bulk micro defect and denuded zone in nitrogen ambient furnace
facebook(new window)  Pirnt(new window) E-mail(new window) Excel Download
 Title & Authors
Effect of pressure and temperature on bulk micro defect and denuded zone in nitrogen ambient furnace
Choi, Young-Kyu; Jeong, Se-Young; Sim, Bok-Cheol;
  PDF(new window)
The effect of temperature and pressure in the nitrogen ambient furnace on bulk micro defect (BMD) and denuded zone (Dz) is experimentally investigated. It is found that as pressure increases, Dz depth increases with a small decrease of BMD density in the range of temperature, . BMD density with hot isostatic pressure treatment (HIP) at temperature of is higher than that without HIP while Dz depth is lower due to much higher BMD density. As the pressure increases, BMD density is increased and saturated to a critical value, and Dz depth increases even if BMD density is saturated. The concentration of nitrogen increases near the surface with increasing pressure, and the peak of the concentration moves closer to the surface. The nitrogen is gathered near the surface, and does not become in-diffusion to the bulk of the wafer. The silicon nitride layer near the surface prevents to inject the additional nitrogen into the bulk of the wafer across the layer. The nitrogen does not affect the formation of BMD. On the other hand, the oxygen is moved into the bulk of the wafer by increasing pressure. Dz depth from the surface is extended into the bulk because the nuclei of BMD move into the bulk of the wafer.
Bulk micro defect;Denuded zone;Nitrogen ambient furnace;Silicon wafer;
 Cited by
W. Lee, H. Yow and T. Tou, "Characterization of crystal-originated particles in silicon nitride doped, CZ-Grown silicon wafers", J. Electrochem. Soc. 153 (2006) G248. crossref(new window)

K. Matsukawa, N. Hattori, S. Maegawa, K. Shirai and H. Yoshida, "Gettering mechanism of transition metals in silicon calculated from first principles", Physica B 376-377 (2006) 224. crossref(new window)

H. Tsuya, "Present status and prospect of Si wafers for ultra large scale integration", Jpn. J. Appl. Phys. 43 (2004) 4055. crossref(new window)

K. Honda, T. Nakanishi, A. Ohsawa and N. Toyokura, "Catastrophic breakdown in silicon oxides: The effect of Fe impurities at the $SiO_2$-Si interface", J. Appl. Phys. 62 (1987) 1960. crossref(new window)

H. Wendt, H. Cerva, V. Lehmann and W. Pamler, "Impact of copper contamination on the quality of silicon oxides", J. Appl. Phys. 65 (1989) 2402. crossref(new window)

H. Goto, L. Pan, M. Tanaka and K. Kashima, "Intrinsic gettering in nitrogen-doped and hydrogen-annealed Czochralski-grown silicon wafers", Jpn. J. Appl. Phys. 40 (2001) 3944. crossref(new window)

D. Yang, J. Chen, X. Ma and D. Que, "Impurity engineering of Czochralski silicon used for ultra large-scaled-integrated circuits", J. Cryst. Growth 311 (2009) 837. crossref(new window)

T. Tan, E. Gardner and W. Tice, "Intrinsic gettering by oxide precipitate induced dislocations in Czochralski Si", Appl. Phys. Lett. 30 (1977) 175. crossref(new window)

R. Falster and W. Bergholz, "The gettering of transition metals by oxygen-related defects in silicon", J. Electrochem. Soc. 137 (1990) 1548. crossref(new window)

B. Park, G. Seo and G. Kim, "Nitrogen-doping effect in a fast-pulled CZ-Si single crystal", J. Cryst. Growth 222 (2001) 74. crossref(new window)

K. Aihara, H. Takeno, Y. Hayamizeu, M. Tamatsuka and T. Masui, "Enhanced nucleation of oxide precipitates during Czochralski silicon crystal growth with nitrogen doping", J. Appl. Phys. 88 (2000) 3705. crossref(new window)

V. Voronkov and R. Falster, "Nucleation of oxide precipitates in vacancy-containing silicon", J. Appl. Phys. 91 (2002) 5802. crossref(new window)

R. Falster, M. Pagani, D. Gambaro, M. Cornara, M. Ohlmo, G. Ferrero, P. Pichler and M. Jacob, "Vacancy-assisted oxygen precipitation phenomena in Si", Solid State Phenom. 57-58 (1997) 129. crossref(new window)

M. Jacob, P. Pichler, R. Ryssel, R. Falster, M. Cornara, D. Gambaro, M. Olmo and M. Pagani, "Observation of vacancy enhancement during rapid thermal annealing in nitrogen", Solid State Phenom. 57-58 (1997) 349. crossref(new window)

V. Voronkov, R. Falster, T. Kim, S. Park and T. Torack, "Depth profiles of oxygen precipitates in nitride-coated silicon wafers subjected to rapid thermal annealing", J. Appl. Phys. 114 (2013) 043520. crossref(new window)

D. Zemke, P. Gerlach, W. Zulehner and K. Jacobs, "Investigations on the correlation between growth rate and gate oxide integrity of Czochralski-grown silicon", J. Gryst. Growth 139 (1994) 37. crossref(new window)

G. Graf, U. Lambert, M. Brohl, A. Ehlert, R. Wahlich and P. Wagner, "Improvement of Czochralski silicon-wafers by high-temperature annealing", J. Electrochem. Soc. 142 (1995) 3189. crossref(new window)

J. Park and G. Rozgonyi, "DRAM wafer qualification issues: oxide integrity vs. D-defects, oxygen precipitates and high temperature annealing", Solid State Phenom. 47-48 (1996) 327. crossref(new window)

J. Vanhellemont, E. Simoen, A. Kanlava, M. Libezny and C. Claeys, "I mpact of oxygen related extended defects on silicon diode characteristics", J. Appl. Phys. 77 (1995) 5667.

G. Kissinger, J. Vanhellemont, E. Simoen, C. Claeys and H. Richer, "In vestigation of oxygen precipitation related crystal defects in processed silicon wafers by infrared light scattering tomography", Mater. Sci. Eng. B36 (1996) 225.

H. Huff, H. Shaake, J. Robinson, S. Baber and D. Wong, "Some observations on oxygen precipitation/gettering in device processed Czochralski silicon", J. Electrochem. Soc. 130 (1983) 1551. crossref(new window)

G. Kissinger, T. Grabolla, G. Morgenstern, H. Richter, D. Graf, J. Vanhellemont, U. Lambert and W. Ammon, "Grown-in oxide precipitate nuclei in Czochralski silicon substrates and their role in device processing", J. Electorhem. Soc. 146 (1999) 1971. crossref(new window)