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Preparation of Boron Doped Fullerene Film by a Thermal Evaporation Technique using Argon Plasma Treatment and Its Electrochemical Application
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  • Journal title : Carbon letters
  • Volume 11, Issue 2,  2010, pp.127-130
  • Publisher : Korean Carbon Society
  • DOI : 10.5714/CL.2010.11.2.127
 Title & Authors
Preparation of Boron Doped Fullerene Film by a Thermal Evaporation Technique using Argon Plasma Treatment and Its Electrochemical Application
Arie, Arenst Andreas; Jeon, Bup-Ju; Lee, Joong-Kee;
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Boron doped fullerene () films were prepared by the thermal evaporation of powder using argon plasma treatment. The morphology and structural characteristics of the thin films were investigated by scanning electron microscope (SEM), Fourier transform infra-red spectroscopy (FTIR) and x-ray photo electron spectroscopy (XPS). The electrochemical application of the boron doped fullerene film as a coating layer for silicon anodes in lithium ion batteries was also investigated. Cyclic voltammetry (CV) measurements were applied to the coated silicon electrodes at a scan rate of . The CV results show that the coating layer act as a passivation layer with respect to the insertion and extraction of lithium ions into the silicon film electrode.
Boron;Doping;Fullerenes;Plasma;Lithium ion battery;
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Improved hydrogen storage in Ca-decorated boron heterofullerenes: a theoretical study, Journal of Materials Chemistry A, 2015, 3, 15, 7710  crossref(new windwow)
Kroto, H. W.; Heath, J. R.; O'Brien, S. C.; Curl, R. F.; Smalley, R. E. Nature 1985, 318, 162. crossref(new window)

Ariciftci, N. S.; Braun, D; Zhang, C; Srdranov, V.; Heeger, A. J.; Wudl, F. Appl.Phys.Lett. 1993, 62, 385.

Lee, J. Y.; Kwon, J. H. Appl.Phys.Lett. 2005, 86, 063514. crossref(new window)

Sun, Q; Wang, Q; Jena, P. Appl.Phys.Lett. 2009, 94, 3058678.

Zou, Y. J.; Zhang, X. W.; Li, Y. L.; Wang, B.; Yan, H. J. Mat.Sci. 2002, 37, 1043. crossref(new window)

Zou, Y. J.; Li, Y. L.; Zhang, X. W.; Wang, B; Yan, H. Mat.Sci.Eng B 2001, 84, 163. crossref(new window)

Rao, A. M.; Zhou, P.; Wang, K; Hager, G. T.; Holden, J. M.; Wang, Y; Lee, W. T.; Bi, X. X.; Eklund, P. C.; Cornett, D. S.; Duncan, M. A.; Amster, I. J. Science 1993, 259, 955. crossref(new window)

Jin, Y.; Yao, C.; Wang, Z.; Xie, E.; Song, Y.; Sun, Y.; Zhang, C.; Liu, J.; Duan, J. Nuclear Instr and Meth. in Physics Research B 2005, 230, 565. crossref(new window)

Dresselhaus, M. S.; Dresselhaus, G.; Eklund, P. C. J. Raman Spect. 1996, 27, 351. crossref(new window)

Wagberg, T.; Jacobsson, P.; Sundqvist, B. Phys.Rev B. 1999, 60, 4536.

Rao, A. M; Eklund, P. C.; Hodeau, J. L.; Marques, L.; Nunez Regueiro, M. Phys.Rev B. 1997, 55, 4766. crossref(new window)

Zou,Y. G.; Liu, B. B.; Yao, M. G.; Hou, Y. Y.; Wang, L.; Yu, S. D.; Wang, P.; Cui, T.; Zou, G. T.; Sundqvist, B.; Wang, G. R.; Lin, Y. C. Acta Phy. Sinica. 2007, 5172.

Muhr, H. J.; Nesper, R.; Schnyder, B.; Kotz, R. Chem. Phys.Lett. 1996, 249, 399. crossref(new window)

Kunzli, H.; Gantenbein, P.; Steiner, R.; Oelhaven, P. J. Anal.Chem. 1993, 346, 41. crossref(new window)

Arie, A. A.; Chang, W.; Lee, J. K. J. Solid State Electrochem. 2010, 14, 51. crossref(new window)