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Effect of SiC Crystal Phase on Growing ZSM-5 on the Surface of SiC
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  • Journal title : Korean Chemical Engineering Research
  • Volume 53, Issue 2,  2015, pp.247-252
  • Publisher : The Korean Institute of Chemical Engineers
  • DOI : 10.9713/kcer.2015.53.2.247
 Title & Authors
Effect of SiC Crystal Phase on Growing ZSM-5 on the Surface of SiC
Jung, Eunjin; Lee, Yoon Joo; Kim, Younghee; Kwon, Woo Teck; Shin, Dong-Geun; Kim, Soo Ryong;
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 Abstract
ZSM-5 crystals grew on the surface of -SiC and -SiC particles by hydrothermal synthesis method. SiC particles which were > of size were used, and oxide layer were developed on the surface of the particles to induce growth of ZSM-5 from the surface. Then, synthesis time and temperature condition were considered growing ZSM-5. In this study, oxide layer was formed on -SiC at in air, and it was controlled to grow ZSM-5 grew from the -SiC surface with synthesis condition. This is due to Si-O-Si or Si-O-Al bond, which is basic framework of ZSM-5 can be easily formed, from the silicon oxide film on the surface of -SiC. When the synthesis temperature was , the size of ZSM-5 was increased, and it covered much area of the SiC surface with better crystal shapes with longer synthesis time.
 Keywords
Zeolite;Silicon Carbide;SiC;Catalyst Support;Catalyst;
 Language
Korean
 Cited by
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