Advanced SearchSearch Tips
Evaluation of green light Emitting diode with p-type GaN interlayer
facebook(new window)  Pirnt(new window) E-mail(new window) Excel Download
  • Journal title : Korean Chemical Engineering Research
  • Volume 54, Issue 2,  2016, pp.274-277
  • Publisher : The Korean Institute of Chemical Engineers
  • DOI : 10.9713/kcer.2016.54.2.274
 Title & Authors
Evaluation of green light Emitting diode with p-type GaN interlayer
Kim, Eunjin; Kim, Jimin; Jang, Soohwan;
  PDF(new window)
Effects of interlayer insertion between multi-quantum well and electron blocking layer of green light emitting diode on diode performances were studied by device simulation. Dependence of Mg doping depth on characteristics of current-voltage, emitting wavelength, leakage current, and external quantum efficiency was investigated, and the optimum diode structure was presented. Device structures with interlayers doped in entire region and up to 30 nm showed remarkable reduced leakage current and effectively relieved efficiency droop which is one of the biggest challenges in green light emitting diode. Furthermore, the most improved characteristics in current-voltage and electroluminescence was obtained by the latter structure.
Light Emitting Diode;GaN;Efficiency Droop;
 Cited by
Baik, K. H., Kim, H., Kim, J., Jung, S. and Jang, S., "Nonpolar Light Emitting Diode with Sharp Near-ultraviolet Emissions Using Hydrothermally Grown ZnO on p-GaN," Appl. Phys. Lett., 103, 091107(2013). crossref(new window)

Park, K. S., Swain, B., Kang, L. S., Lee, C. G., Uhm, S., Hong, H. S., Shim, J.-G. and Park, J.-J., "Study on Leaching Behavior for Recovery of Ga Metal from LED Scraps," App. Chem. Eng., 25(4), 414(2014). crossref(new window)

Chung, W., Yu, H. J., Park, S. H., Chun, B.-H. and Kim, S. H., "Luminescence Properties of White LED with Different CdSe nanoparticles Phosphor Layer," Korean Chem. Eng. Res., 49(3), 320(2011). crossref(new window)

Jun, Z., Zhuo, X.-J., Li, D.-W., Yu, L., Li, K., Zhang, Y.-W., Diao, J.-S., Wang, X.-F. and Li, S.-T., "Effect of Mg Doping in GaN Interlayer on the Performance of Green Light-Emitting Diodes," IEEE Photonics Technology Letters, 27(2), 117(2015). crossref(new window)

Piprek, J., "Efficiency Droop in Nitride-based Light-emitting Diodes," Phys. Status Solidi A, 207(10), 2217(2010). crossref(new window)

Mukai, T., Yamada, M. and Nakamura, S., "Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes," Jpn. J. Appl. Phys. 1, 38, 3976(1999).

Hsueh, T.-H., Sheu, J.-K., Lai, W.-C., Wang, Y.-T., Kuo, H.-C. and Wang, S.-C., "Improvement of the Efficiency of InGaN-GaN Quantum-Well Light-Emitting Diodes Grown With a Pulsed-Trimethylindium Flow Process," IEEE Photonics Technol. Lett., 21, 414(2009). crossref(new window)

Meneghini, M., Trivellin, N., Meneghesso, G., Zanoni, E., Zehnder, U. and Hahn, B., "A Combined Electro-optical Method for the Determination of the Recombination Parameters in InGaN-based Light-emitting Diodes," J. Appl. Phys., 106, 114508(2009). crossref(new window)

Laubsch, A., Sabathil, M., Baur, J., Peter, M. and Hahn, B., "High-Power and High-Efficiency InGaN-Based Light Emitters," IEEE Trans. Electron Devices, 57, 79(2010). crossref(new window)

Knauer, A., Brunner, F., Kolbe, T., Kuller, V., Rodriguez, H., Einfeldt, S., Weyers, M. and Kneissl, M., "MOVPE Growth for UV-LEDs," Proc. SPIE, 7231, 72310G(2009). crossref(new window)

Vampola, K. J., Iza, M., Keller, S., DenBaars, S. P. and Nakamura, S., "Measurement of Electron Overflow in 450 nm InGaN Lightemitting Diode Structures," Appl. Phys. Lett., 94, 061116(2009). crossref(new window)