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Evaluation of green light Emitting diode with p-type GaN interlayer
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  • Journal title : Korean Chemical Engineering Research
  • Volume 54, Issue 2,  2016, pp.274-277
  • Publisher : The Korean Institute of Chemical Engineers
  • DOI : 10.9713/kcer.2016.54.2.274
 Title & Authors
Evaluation of green light Emitting diode with p-type GaN interlayer
Kim, Eunjin; Kim, Jimin; Jang, Soohwan;
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 Abstract
Effects of interlayer insertion between multi-quantum well and electron blocking layer of green light emitting diode on diode performances were studied by device simulation. Dependence of Mg doping depth on characteristics of current-voltage, emitting wavelength, leakage current, and external quantum efficiency was investigated, and the optimum diode structure was presented. Device structures with interlayers doped in entire region and up to 30 nm showed remarkable reduced leakage current and effectively relieved efficiency droop which is one of the biggest challenges in green light emitting diode. Furthermore, the most improved characteristics in current-voltage and electroluminescence was obtained by the latter structure.
 Keywords
Light Emitting Diode;GaN;Efficiency Droop;
 Language
Korean
 Cited by
 References
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