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Design of an NMOS-Diode eFuse OTP Memory IP for CMOS Image Sensors
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 Title & Authors
Design of an NMOS-Diode eFuse OTP Memory IP for CMOS Image Sensors
Lee, Seung-Hoon; Ha, Pan-Bong; Kim, Young-Hee;
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In this paper, an NMOS-diode eFuse OTP (One-Time Programmable) memory cell is proposed using a parasitic junction diode formed between a PW (P-Well), a body of an isolated NMOS (N-channel MOSFET) transistor with the small channel width, and an n+ diffusion, a source node, in a DNW (Deep N-Well) instead of an NMOS transistor with the big channel width as a program select device. Blowing of the proposed cell is done through the parasitic junction formed in the NMOS transistor in the program mode. Sensing failures of `0` data are removed because of removed contact voltage drop of a diode since a NMOS transistor is used instead of the junction diode in the read mode. In addition, a problem of being blown for a non-blown eFuse from a read current through the corresponding eFuse OTP cell is solved by limiting the read current to less than since a voltage is transferred to BL by using an NMOS transistor with the small channel width in the read mode.
NMOS-Diode;eFuse;OTP;CMOS image sensor;sensing failure;
 Cited by
J. H. Jang, L. Y. Jin, S. K. Heo, J. P. Josonen, T. W. Kim, P. B. Ha, and Y. H. Kim, "Design of Intra Oral X-ray CMOS Image Sensing," Journal of the Korea Institute of Information and Communication Engineering, vol. 16, no. 10, pp. 2237-2246, Oct. 2012. crossref(new window)

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