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Influence of Ratio of Top and Bottom Oxide Thickness on Subthreshold Swing for Asymmetric Double Gate MOSFET
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 Title & Authors
Influence of Ratio of Top and Bottom Oxide Thickness on Subthreshold Swing for Asymmetric Double Gate MOSFET
Jung, Hakkee;
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Asymmetric double gate(DG) MOSFET has the different top and bottom gate oxides thicknesses. It is analyzed the deviation of subthreshold swing(SS) and conduction path for the ratio of top and bottom gate oxide thickness of asymmetric DGMOSFET. SS varied along with conduction path, and conduction path varied with top and bottom gate oxide thickness. The asymmetric DGMOSFET became valuable device to reduce the short channel effects like degradation of SS. SSs were obtained from analytical potential distribution by Poisson's equation, and it was analyzed how the ratio of top and bottom oxide thickness influenced on conduction path and SS. SSs and conduction path were greatly influenced by the ratio of top and bottom gate oxide thickness. Bottom gate voltage cause significant influence on SS, and SS are changed with a range of 200 mV/dec for << under bottom voltage of 0.7 V.
Asymmetric Double Gate;Subthreshold Swing;Conduction Path;Ratio of Top and Bottom Gate Oxide Thickness;
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G.A.T.Seville, J.P.Rojas, H.M.Fahad, A.M.Hussain, C.E.Smith, M.M.Hussain and R. Ghanem, "Flexible and transparant silicon-on-polymer based sub-20 nm non-planar 3D FinFET for brain-architecture inspired computation," Advanced Materials, vol.26, no.18, pp.2794-2799, Feb. 2014. crossref(new window)

J.B.Roldan, B.Gonzalez, B.Iniguez, A.M.Roldan, A.Lazaro and A.Cerdeira, "In-depth analysis and modelling of self-heating effects in nanometric DGMOSFETs," Solidstate electronics, vol.79, no.1, pp.179-184, Jan. 2013. crossref(new window)

S. Mohammadi, A. Afzali-Kusha and S. Mohammadi," Compact modeling of short-channel effects in symmetric and asymmetric 3-T/4-T double gate MOSFETs," Microelectronics Reliability, vol.51, pp.543-549, Nov. 2011. crossref(new window)

Z.Ding, G.Hu, J.Gu, R.Liu, L.Wang and T.Tang,"An analytical model for channel potential and subthreshold swing of the symmetric and asymmetric double-gate MOSFETs," Microelectronics J., vol.42, pp.515-519, Dec. 2011. crossref(new window)

Hakkee Jung, "Relation of Conduction Path and Subthreshold Swing for Doping Profile of Asymmetric Double Gate MOSFET," J. of KIICE, vol.18, no.8, pp.1925-1930. Aug. 2014.

Q. Chen, B. Agrawal and J.D. Meindl, "A Comprehensive Analytical Subthreshold Swing(S) Model for Double-Gate MOSFETs," IEEE Trans. Electron Devices, vol. 49, pp. 1086-1090, Jun. 2011.