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Effect of Substrate Temperature on the Optical and Electrical Properties of ITO Thin Films deposited on Nb2O5/SiO2 Buffer Layer
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 Title & Authors
Effect of Substrate Temperature on the Optical and Electrical Properties of ITO Thin Films deposited on Nb2O5/SiO2 Buffer Layer
Joung, Yang-Hee; Kang, Seong-Jun;
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In this study, we prepared ITO thin films on double buffer layer using DC magnetron sputtering method and investigated electrical and optical properties with various substrate temperatures (room temperature ~ ). The resistivity showed a decreasing tendency, because crystallinity has been improved due to the enlarged grain size with increasing substrate temperature. ITO thin film deposited at showed the most excellent value of resistivity and sheet resistance as , , respectively. In results of optical properties, average transmittance was increased but chromaticity () was decreased in visible light region (400~800nm) with increasing substrate temperature. Average transmittance and chromaticity () of ITO thin film deposited at exhibited significantly improved results as 85.8% and 2.13 compared to 82.8% and 4.56 of the ITO thin film without buffer layer. Finally, we found that ITO thin film introduced double buffer layer has a remarkably improved optical property such as transmittance and chromaticity due to the index matching effect.
ITO thin film; buffer layer;Sheet resistance;Transmittance;Chromaticity;Index matching;
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