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Influence of Tunneling Current on Threshold voltage Shift by Channel Length for Asymmetric Double Gate MOSFET
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 Title & Authors
Influence of Tunneling Current on Threshold voltage Shift by Channel Length for Asymmetric Double Gate MOSFET
Jung, Hakkee;
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This paper analyzes the influence of tunneling current on threshold voltage shift by channel length of short channel asymmetric double gate(DG) MOSFET. Tunneling current significantly increases by decrease of channel length in the region of 10 nm below, and the secondary effects such as threshold voltage shift occurs. Threshold voltage shift due to tunneling current is not negligible even in case of asymmetric DGMOSFET to develop for reduction of short channel effects. Off current consists of thermionic and tunneling current, and the ratio of tunneling current is increasing with reduction of channel length. The WKB(Wentzel-Kramers-Brillouin) approximation is used to obtain tunneling current, and potential distribution in channel is hermeneutically derived. As a result, threshold voltage shift due to tunneling current is greatly occurred for decreasing of channel length in short channel asymmetric DGMOSFET. Threshold voltage is changing according to bottom gate voltages, but threshold voltage shifts is nearly constant.
asymmetric;tunneling current;channel length;threshold voltage shift;WKB approximation;
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Bodnara, 10 nm FinFET added to Samsung Foundry's Process Roadmap [internet].

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