Advanced SearchSearch Tips
Optical and Electronic Properties of SnO2 Thin Films Fabricated Using the SILAR Method
facebook(new window)  Pirnt(new window) E-mail(new window) Excel Download
 Title & Authors
Optical and Electronic Properties of SnO2 Thin Films Fabricated Using the SILAR Method
Jang, Joohee; Yim, Haena; Cho, Yoon-Ho; Kang, Dong-Heon; Choi, Ji-Won;
  PDF(new window)
Tin oxide thin films were fabricated on glass substrates by the successive ionic layer adsorption and reaction (SILAR) method at room temperature and ambient pressure. Before measuring their properties, all samples were annealed at for 2 h in air. Film thickness increased with the number of cycles; X-ray diffraction patterns for the annealed thin films indicated a single phase. Thickness of the films increased from 12 to 50 nm as the number of cycles increased from 20 to 60. Although the optical transmittance decreased with thickness, 50 nm thin films exhibited a high value of more than 85%. Regarding electronic properties, sheet resistance of the films decreased as thickness increased; however, the measured resistivity of the thin film was nearly constant with thickness (). From Hall measurements, the 50 nm thickness thin film had the highest mobility of the samples (). In conclusion, optical and electronic properties of thin films could be controlled by adjusting the number of SILAR cycles.
;Oxide semiconductors;SILAR method;
 Cited by
E. Fortunato, P. Barquinha, and R. Martins, "Oxide semiconductor thin film transistors: A review of recent advances", Adv. Mater., Vol. 24, No. 22, pp. 2945-2986, 2012. crossref(new window)

H. A. Klasens and H. Koelmans, "A tin oxide field effect transistor", Solid-State Electron., Vol. 7, No. 9, pp. 701-702, 1964. crossref(new window)

A. Aoki and H. Sasakura, "Tin oxide thin film transistors", J. Appl. Phys., Vol. 9, No. 5, pp. 582-582, 1970. crossref(new window)

R. E. Presley, C. L. Munsee, C-H. Park, D. Hong, J. F. Wager, and D. A. Keszler, "Tin oxide transparent thin-film transistors." J. Phys. D: Appl. Phys., Vol 37, pp. 2810-2813, 2004.

M. Mizuhashi "Electrical properties of $SnO_2$ films on various glass substrates", J. Non-Cryst. Solids, Vol. 38-39, No. 1, pp. 329-334, 1980. crossref(new window)

K. L. Chopra, S. Major, and D. K. Pandya, "Transparent conductors - a status review", Thin Solid Films, Vol 102, No. 1, pp. 1-46, 1983. crossref(new window)

E. Shanthi, V. Dutta, A. Banerjee, and K. L. Chopra, "Electrical and optical properties of tin oxide films doped with F and (Sb+ F)", J. Appl. Phys., Vol. 53, No. 3, pp. 1615-1621, 1982. crossref(new window)

D. Ginley, H. Hosono, and D. C. Paine, "Effect of F, Cl and Br doping on electrical properties of sprayed $SnO_2$ films", J. Mater. Sci. Lett., Vol. 15, No.6, pp. 497-499, 1996.

B. Stjerna, E. Olsson, and C. G. Granqvist, "Optical and electrical properties of radio frequency sputtered tin oxide films doped with oxygen vacancies, F, Sb, or Mo", J. Appl. Phys., Vol.76, pp. 37-97, 1994.

H. M. Pathan and C. D. Lokhande, "Deposition of metal chalcogenide thin films by successive ionic layer adsorption and reaction (SILAR) method", Bull. Mater. Sci, Vol. 27, pp. 85-111, 2004. crossref(new window)

F. Bayansal, Y.Culen, B Sahin, S. Kahraman, and H.A. Cerinkara, "CuO nanostructures grown by the SILAR method : In fumence of Pb doping on the morphological structural and optical properties", Journal of Alloy and Compounds, Vol. 691, pp 378-382, 2015.

A. T. Ravichandran, K. Dhanabalan, A. Vasuhi, R. Chandramohan, and Srinivas Mantha, "Morphology, bandgap, and grain size tailoring in Cu2O thin film by SILAR method", IEEE Transactions on Nanotechnology, Vol. 14, No. 1, pp108-112, 2015. crossref(new window)

Yunus Akaltun and Tuba Cayir, "Fabrication and characterization of NiO thin films prepared by SILAR method", Journal of Alloys and Compounds, Vol. 625, pp 144-148, 2015. crossref(new window)

T.R. Giraldi, M. T. Escote, M. I. B. Bernardi, V. Bouquet, E. R. Leite, E. Longoi and J. A. Varela, "Effect of thickness on the electrical and optical properties of Sb-doped $SnO_2$ (ATO) thin films", J. Electroceram., Vol 13, pp. 159-165, 2004. crossref(new window)

M. D. Benoy, E. M. Mohammed, M. B. Suresh, P. J. Binu, and B. Pradeep, "Thickness dependence of the properties of indium tin oxide (ITO) films prepared by activated reactive evaporation", Braz. J. Phys., Vol. 39, No. 7, pp. 629-632, 2009.

S. M. Pusawale, P. R. Deshmukh and C.D Lokhande, "Chemical synthesis and characterization of hydrous tin oxide($SnO_2$:$ H_2O$) thin films." Indian Academy of Sciences, Vol. 34, No. 34, pp. 1179-1183, 2011.

Y. Caglar, M. Caglar, S. Ilican, S. Aksoy, and F. Yakuphanoglu, "Effect of channel thickness on the field effect mobility of ZnO-TFT fabricated by sol gel process", J. Alloys Compd., Vol 621, pp. 189-193, 2015. crossref(new window)