Optical and Electronic Properties of SnO2 Thin Films Fabricated Using the SILAR Method Jang, Joohee; Yim, Haena; Cho, Yoon-Ho; Kang, Dong-Heon; Choi, Ji-Won;
Tin oxide thin films were fabricated on glass substrates by the successive ionic layer adsorption and reaction (SILAR) method at room temperature and ambient pressure. Before measuring their properties, all samples were annealed at for 2 h in air. Film thickness increased with the number of cycles; X-ray diffraction patterns for the annealed thin films indicated a single phase. Thickness of the films increased from 12 to 50 nm as the number of cycles increased from 20 to 60. Although the optical transmittance decreased with thickness, 50 nm thin films exhibited a high value of more than 85%. Regarding electronic properties, sheet resistance of the films decreased as thickness increased; however, the measured resistivity of the thin film was nearly constant with thickness (). From Hall measurements, the 50 nm thickness thin film had the highest mobility of the samples (). In conclusion, optical and electronic properties of thin films could be controlled by adjusting the number of SILAR cycles.
;Oxide semiconductors;SILAR method;
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