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Growth and Optical Conductivity Properties for BaAl2Se4 Single Crystal Thin Film by Hot Wall Epitaxy
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 Title & Authors
Growth and Optical Conductivity Properties for BaAl2Se4 Single Crystal Thin Film by Hot Wall Epitaxy
Jeong, Junwoo; Lee, Kijung; Hong, Kwangjoon;
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A stoichiometric mixture of evaporating materials for single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were and , respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal thin films measured from Hall effect by van der Pauw method are and at 293 K, respectively. The temperature dependence of the energy band gap of the obtained from the absorption spectra was well described by the Varshni`s relation, $E_g(T)
single crystal thin films;Energy band gap;photocurrent spectum;Crystal field splitting energy;Spin-orbit energy;
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Von WILFRIED KLEE und HERBERT SCHAFER, "Darstellung und Struktur von $BaAl_2Se_4$, $BaGa_2Se_4$, $CaGa_2Se_4$ und $CaIn_2Te_4$", Z. anorg. allg., Vol. 479, pp.125-133, 1981. crossref(new window)

Moon-Seog Jin, Choong-Il Lee, Chang-Sun Yoon, Chang- Dae Kim, Jae-Mo Goh and Wha-Tek Kim, "Photoluminescence spectra of undoped and $Sm^3+$-doped $BaAl_2S_4$ and $BaAl_2Se_4$single crystals", J. Mater. Res., Vol. 16, No. 5, 2001.

Jae-Mo Goh and Wha-Tek Kim, Moon-Seog Jin, Sung-Hyu Choe, Hyung-Gon Kim, and Tae-Young Park, "Opitcal properties of undoped and $Ho^{3+}$, $$Er^{3+}$, and $Tm^{3+}$-doped $BaAl_2S_4$ and $BaAl_2Se_4$ single crystals", Journal of Applied Physics, Vol. 88, No. 7, 2000.

S. P. Yadav, P. S. Shinde, K . Y. Rajpure and C. H. Bhosale, "Photoelectrochemical properties of spray deposited n- $ZnIn_2Se_4$ thin film", Solar Energy Materials & Solar Cells, Vol. 92, pp. 453-456, 2008. crossref(new window)

J. Filipowicz, N. Romeo, and L. Tarricone, "Influence of Y -Irradiation on the optical and electrical properties of $BaAl_2Se_4$ films", Radiat. Phys. Chem., Vol. 50, No. 2, pp. 175-177, 1999.

A. A. Vaipolin, Yu. A. Nikolaev, V. Yu. Rud, E. I. terukov, "Radiative recombination in $BaAl_2Se_4$", Semiconductors, Vol. 37, p. 432, 2003.

T. A. Hendia and L .I. Soliman, "Optical absorption behavior of evaporated $BaAl_2Se_4$ thin films", Thin Solid Films, Vol. 261, 322-327, 1955.

K. J. Hong, T. S. Jeong and S. H. You, "Structural and optical of $CuGaSe_2$ layers grown by hot wall epitaxy", J. Crystal Growth, Vol. 310, pp. 2717-2723, 2008. crossref(new window)

B. D. Cullity, "Elements of X-ray diffractions", Addson- Wesley, chap.11, (1985).

H. Fujita, "Electron radition damage in Cadium-Selenide crystal at liquid-helium temperrature", J. Phys. Soc., Vol. 20, p. 109, 1965. crossref(new window)

Y. P. Varshni, "Far-infrared optical absorption of $Fe^{2+}$ in ZnSe", Physica, Vol. 34, p. 149, 1967. crossref(new window)

J. L. Shay, B. Tell, L. M. Schiavone, H. M. Kasper and F. Thiel, "Analysis of the electrical and luminescent properties of $BaAl_2Se_4$", Phys. Rev., Vol. 9, No. 4, p. 1719, 1974. crossref(new window)

J. Hopfield. "$BaAl_2Se_4/CdS$ heterojunction photovoltaic detectors", J. Phys. Chem. Solids, Vol. 15, p. 97 (1960). crossref(new window)

J. L. Shay and J. H. Wernick, "Ternary chalcopyrite semiconductor : Growth, electronic properties and applications", (chap. 3, chap. 4, Pergamon Press, 1975)

J. L. Birman. Phys. "Luminescence and impurity states in $BaAl_2Se_4$", Rev. Lett. Vol. 2, p. 159, 1959. crossref(new window)

M. L. Glasser, "Polycrystalline $BaAl_2Se_4$ photoelectrochemical cells", J. Phys. Chem. Solids, Vol. 10, p. 229 1959. crossref(new window)

K. Cho, Excitons, Topics in Current Physics, Vol. 14, (Springer-Verlag, Berlin, 1979), P. 18.