Growth and Optical Conductivity Properties for BaAl2Se4 Single Crystal Thin Film by Hot Wall Epitaxy

Title & Authors
Growth and Optical Conductivity Properties for BaAl2Se4 Single Crystal Thin Film by Hot Wall Epitaxy
Jeong, Junwoo; Lee, Kijung; Hong, Kwangjoon;

Abstract
A stoichiometric mixture of evaporating materials for $\small{BaAl_2Se_4}$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $\small{BaAl_2Se_4}$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $\small{610^{\circ}C}$ and $\small{410^{\circ}C}$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $\small{BaAl_2Se_4}$ single crystal thin films measured from Hall effect by van der Pauw method are $\small{8.29{\times}10^{-16}cm^{-3}}$ and $\small{278cm^2/vs}$ at 293 K, respectively. The temperature dependence of the energy band gap of the $\small{BaAl_2Se_4}$ obtained from the absorption spectra was well described by the Varshni`s relation, $E_g(T) Keywords $\small{BaAl_2Se_4}$ single crystal thin films;Energy band gap;photocurrent spectum;Crystal field splitting energy;Spin-orbit energy; Language Korean Cited by References 1. Von WILFRIED KLEE und HERBERT SCHAFER, "Darstellung und Struktur von$BaAl_2Se_4$,$BaGa_2Se_4$,$CaGa_2Se_4$und$CaIn_2Te_4$", Z. anorg. allg., Vol. 479, pp.125-133, 1981. 2. Moon-Seog Jin, Choong-Il Lee, Chang-Sun Yoon, Chang- Dae Kim, Jae-Mo Goh and Wha-Tek Kim, "Photoluminescence spectra of undoped and$Sm^3+$-doped$BaAl_2S_4$and$BaAl_2Se_4$single crystals", J. Mater. Res., Vol. 16, No. 5, 2001. 3. Jae-Mo Goh and Wha-Tek Kim, Moon-Seog Jin, Sung-Hyu Choe, Hyung-Gon Kim, and Tae-Young Park, "Opitcal properties of undoped and$Ho^{3+}$,$$Er^{3+}$, and $Tm^{3+}$-doped $BaAl_2S_4$ and $BaAl_2Se_4$ single crystals", Journal of Applied Physics, Vol. 88, No. 7, 2000.

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