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Highly Sensitive Trimethylamine Sensing Characteristics of V-doped NiO Porous Structures
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 Title & Authors
Highly Sensitive Trimethylamine Sensing Characteristics of V-doped NiO Porous Structures
Park, Sei Woong; Yoon, Ji-Wook; Park, Joon-Shik; Lee, Jong-Heun;
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Pure and V-doped NiO porous structures were prepared by the evaporation-induced surfactant assembly and subsequent pyrolysis of assembled structures, and their gas sensing characteristics were investigated. Pure NiO porous structures showed negligible gas responses (S=, : sensor resistance in analytic gas; : sensor resistance in air) to 5 ppm trimethylamine (S=1.17) as well as other interfering gases such as ethanol, p-xylene, toluene, benzene and formaldehyde (S=1.02-1.13). In contrast, the V-doped NiO porous structures exhibited a high response and selectivity to 5 ppm trimethylamine (S=14.5) with low cross-responses to other interfering gases (S=4.0-8.7) at . The high gas response of V-doped NiO porous structures to trimethylamine was explained by electronic sensitization, that is, the increase in the chemoresistive variation due to the decrease in the hole concentration. The enhanced selectivity to trimethylamine was discussed in relation to the interaction between basic trimethylamine gas and acidic V catalysts.
V-doped NiO;porous structures;trimethylamine sensor;electronic sensitization;acid-base reaction;
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