Growth Kinetics and Electronic Properties of Passive Film of Zinc in Borate Buffer Solution

Chung, Se-Jin; Kim, Youn-Kyoo

doi:10.5012/jkcs.2012.56.1.047

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Growth Kinetics and Electronic Properties of Passive Film of Zinc in Borate Buffer Solution

Journal title : Journal of the Korean Chemical Society
Volume 56, Issue 1, 2012, pp.47-53
Publisher : Korean Chemical Society
DOI : 10.5012/jkcs.2012.56.1.047

Title & Authors

Growth Kinetics and Electronic Properties of Passive Film of Zinc in Borate Buffer Solution
Chung, Se-Jin; Kim, Youn-Kyoo;

Abstract

We have investigated the growth kinetics and electronic properties of passive film of zinc in borate buffer solution. The oxide film formed in passivation process of zinc has showed the electronic properties of n-type semiconductor based on the Mott-Schottky equation. And it was found out that the oxide film consisted ZnO and ${$Zn(OH)_2$}$ was composed of deep and shallow donors.

Keywords

Zinc;Corrosion;Passivation;Semiconductor;Mott-schottky;

Language

Korean

Cited by

1time(s) in KSCD

Borate 완충용액에서 니켈 산화피막의 생성 과정과 전기적 성질,김연규;

대한화학회지, 2014. vol.58. 1, pp.9-16

1time(s) in CrossRef

Growth Kinetics and Electronic Properties of Passive Film of Nickel in Borate Buffer Solution, Journal of the Korean Chemical Society, 2014, 58, 1, 9

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