Publisher : Institude of Korean Electrical and Electronics Engineers
DOI : 10.7471/ikeee.2016.20.2.181
Title & Authors
A Study on Optimization of the P-region of 4H-SiC MPS Diode Jung, Se-Woong; Kim, Ki-Hwan; Kim, So-Mang; Park, Sung-Joon; Koo, Sang-Mo;
In this work, the merged PiN Schottky(MPS) diodes based silicon carbide(SiC) have been optimized and designed for 1200V diodes by 2D-atlas simulation tool. We investigated the optimized characteristics of SiC MPS diodes such as breakdown voltage and specific on-resistance by varying the doping concentrations of P-Grid/epi-layer and space of P-Grid, which are the most important parameters. The breakdown voltage and specific on-resistance, based on Baliga`s Figure Of Merit (BFOM), have been compared with and the SiC-based MPS diodes show improved BFOMs with low values of specific on-resistance and high breakdown voltage. It has been demonstrated 1,200 V SiC MPS diodes will find useful applications in high voltage energy-efficient devices.
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