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A Study on Optimization of the P-region of 4H-SiC MPS Diode
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  • Journal title : Journal of IKEEE
  • Volume 20, Issue 2,  2016, pp.181-183
  • Publisher : Institude of Korean Electrical and Electronics Engineers
  • DOI : 10.7471/ikeee.2016.20.2.181
 Title & Authors
A Study on Optimization of the P-region of 4H-SiC MPS Diode
Jung, Se-Woong; Kim, Ki-Hwan; Kim, So-Mang; Park, Sung-Joon; Koo, Sang-Mo;
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In this work, the merged PiN Schottky(MPS) diodes based silicon carbide(SiC) have been optimized and designed for 1200V diodes by 2D-atlas simulation tool. We investigated the optimized characteristics of SiC MPS diodes such as breakdown voltage and specific on-resistance by varying the doping concentrations of P-Grid/epi-layer and space of P-Grid, which are the most important parameters. The breakdown voltage and specific on-resistance, based on Baliga`s Figure Of Merit (BFOM), have been compared with and the SiC-based MPS diodes show improved BFOMs with low values of specific on-resistance and high breakdown voltage. It has been demonstrated 1,200 V SiC MPS diodes will find useful applications in high voltage energy-efficient devices.
4H-SiC;Diodes;Breakdown voltage;specific on-resistance;P-Grid;doping concentration;
 Cited by
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Lin Zhu et al., "Design, fabrication, and characterization of low forward drop, low leakage, 1-kV 4H-SiC JBS rectifiers", IEEE Transactions on Electron, vol.53, no.2, pp.363-368, 2006

Mihai Draghici et al., "A New 1200 V SiC MPS Diode with Improved Performance and Ruggedness", Silicon Carbide and Related Materials 2014 on Ma terials Science Forum, 2014, pp. 608-611.