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A Sub-1V Nanopower CMOS Only Bandgap Voltage Reference
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  • Journal title : Journal of IKEEE
  • Volume 20, Issue 2,  2016, pp.192-195
  • Publisher : Institude of Korean Electrical and Electronics Engineers
  • DOI : 10.7471/ikeee.2016.20.2.192
 Title & Authors
A Sub-1V Nanopower CMOS Only Bandgap Voltage Reference
Park, Chang-Bum; Lim, Shin-Il;
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 Abstract
In this paper, we present a nanopower CMOS bandgap voltage reference working in sub-threshold region without resisters and bipolar junction transistors (BJT). Complimentary to absolute temperature (CTAT) voltage generator was realized by using two n-MOSFET pair with body bias circuit to make a sufficient amount of CTAT voltage. Proportional to absolute temperature (PTAT) voltage was generated from differential amplifier by using different aspect ratio of input MOSFET pair. The proposed circuits eliminate the use of resisters and BJTs for the operation in a sub-1V low supply voltage and for small die area. The circuits are implemented in 0.18um standard CMOS process. The simulation results show that the proposed sub-BGR generates a reference voltage of 290mV, obtaining temperature coefficient of 92 ppm/ in -20 to temperature range. The circuits consume 15.7nW at 0.63V supply.
 Keywords
bandgap reference;nanopower;subthreshold;voltage reference;BGR;
 Language
Korean
 Cited by
 References
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