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Precise Comparison of Two-dimensional Dopant Profiles Measured by Low-voltage Scanning Electron Microscopy and Electron Holography Techniques
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  • Journal title : Applied Microscopy
  • Volume 42, Issue 3,  2012, pp.158-163
  • Publisher : Korean Society of Electron Microscopy
  • DOI : 10.9729/AM.2012.42.3.158
 Title & Authors
Precise Comparison of Two-dimensional Dopant Profiles Measured by Low-voltage Scanning Electron Microscopy and Electron Holography Techniques
Hyun, Moon-Seop; Yoo, Jung-Ho; Kwak, Noh-Yeal; Kim, Won; Rhee, Choong-Kyun; Yang, Jun-Mo;
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Detailed comparison of low-voltage scanning electron microscopy and electron holography techniques for two-dimensional (2D) dopant profiling was carried out with using the same multilayered p-n junction specimen. The dopant profiles obtained from two methods are in good agreement with each other. It demonstrates that reliability of dopant profile measurement can be increased through precise comparison of 2D profiles obtained from various microscopic techniques.
2-dimensional dopant profiling;p-n junction;Electron holography;Low-voltage scanning electron microscopy;
 Cited by
Electrical Homo-Junction Delineation Techniques: A Comparative Study, Materials Sciences and Applications, 2016, 07, 06, 326  crossref(new windwow)
Bertrand G, Deleonibus S, Previtali B, Guegan G, Jehl X, Sanquer M, and Balestra F (2004) Towards the limits of conventional MOSFETs: case of sub 30 nm NMOS devices. Solid-State Electron. 48, 505-509. crossref(new window)

El-Gomati M, Zaggout F, Jayacody H, Tear S, and Wilson K (2005) Why is it possible to detect doped regions of semiconductors in low voltage SEM: a review and update. Surf. Interface Anal. 37, 901-911. crossref(new window)

Elliott S L, Broom R F, and Humphrey C J (2002) Dopant profi ling with the scanning electron microscope: a study of Si. J. Appl. Phys. 91, 9116- 9122. crossref(new window)

Eo H-J, Yang J-M, Park T-S, Lee J-P, Kim W, Park J-C, and Lee S-Y (2004) Chemical junction delineation of a specific site in Si devices. J. Electron Microsc. 53, 277-280. crossref(new window)

Formanek P and Bugiel E (2006a) Specimen preparation for electron holography of semiconductor devices. Ultramicroscopy 106, 365- 375. crossref(new window)

Formanek P and Bugiel E (2006b) On specimen tilt for electron holography of semiconductor devices. Ultramicroscopy 106, 292-300. crossref(new window)

Morita S (2007) Roadmap of Scanning Probe Microscopy (Springer-Verlag, Berlin).

Perovic D D, Castell M R, Howie A, Lavoie C, Tiedje T, and Cole J S W (1995) Field-emission SEM imaging of compositional and doping layer semiconductor superlattices. Ultramicorscopy 58, 104-113. crossref(new window)

Rau W D, Schwander PF, Baumann H, Höppner W, and Ourmazd A (1999) Two-dimensional mapping of the electrostatic potential in transistors by electron holography. Phys. Rev. Lett. 82, 2614-2617. crossref(new window)

Sealy C P, Castell M R, and Wilshaw P R (2000) Mechanism for secondary electron dopant contrast in the SEM. J. Electron. Microsc. 49, 311- 321. crossref(new window)

Shaislamov U, Yang J-M, Yoo J H, Seo H-S, Park K-J, Choi C-J, Hong T-E, and Yang B (2008) Two-dimensional dopant profiling in semiconductor devices by electron holography and chemical etching delineation techniques with the same specimen. Microelectron. Reliab. 48, 1734-1736. crossref(new window)

Tonomura A (1999) Electron Holography (Springer, Berlin).

Twitchett A C, Dunin-Borkowski R E, Hallifax R J, Broom R F, and Midgley P A (2004) Off-axis electron holography of electrostatic potentials in unbiased and reverse biased focused ion beam milled semiconductor devices. J. Microsc. 214, 287-296. crossref(new window)

Venables D and Maher D M (1996) Quantitative two-dimensional dopant profi les obtained directly from secondary electron images. J. Vac. Sci. Technol. B 14, 421-425. crossref(new window)

Volkl E, Allard L F, and Joy D C (1998) Introduction to Electron Holography (Plenum, New York).

Yoo J H, Yang J-M, Shaislamov U, Ahn C W, Hwang W-J, Park J K, Park C M, Hong S B, Kim J J, and Shindo D (2008) Electron holography study for two-dimensional dopant profile measurement with specimens prepared by backside ion milling. J. Electron Microsc. 57, 13-18.

Zavyalov V V, McMurray J S, and Williams C C (1999) Scanning capacitance microscope methodology for quantitative analysis of p-n junctions. J. Appl. Phys. 85, 7774-7783. crossref(new window)