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ITO Nanowires-embedded Transparent Metal-oxide Semiconductor Photoelectric Devices
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 Title & Authors
ITO Nanowires-embedded Transparent Metal-oxide Semiconductor Photoelectric Devices
Kim, Hyunki; Kim, Hong-Sik; Patel, Malkeshkumar; Kim, Joondong;
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Highly optical transparent photoelectric devices were realized by using a transparent metal-oxide semiconductor heterojunction of p-type NiO and n-type ZnO. A functional template of ITO nanowires (NWs) was applied to this transparent heterojunction device to enlarge the light-reactive surface. The ITO NWs/n-ZnO/p-NiO heterojunction device provided a significant high rectification ratio of 275 with a considerably low reverse saturation current of 0.2 nA. The optical transparency was about 80% for visible wavelengths, however showed an excellent blocking UV light. The nanostructured transparent heterojunction devices were applied for UV photodetectors to show ultra fast photoresponses with a rise time of 8.3 mS and a fall time of 20 ms, respectively. We suggest this transparent and super-performing UV responser can practically applied in transparent electronics and smart window applications.
Transparent photoelectric devices;ITO nanowires;NiO;ZnO;Heterojunction;
 Cited by
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한국전기전자재료학회논문지, 2016. vol.29. 7, pp.445-448 crossref(new window)
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