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Fabrication and Electrical Characteristics of Transparent and Bendable a-IGZO Thin-film Transistors
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 Title & Authors
Fabrication and Electrical Characteristics of Transparent and Bendable a-IGZO Thin-film Transistors
Park, Sukhyung; Cho, Kyoungah; Oh, Hyungon; Kim, Sangsig;
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In this study, we fabricate transparent and bendable a-IGZO (amorphous indium gallium zinc oxide) TFTs (thin-film transistors) with a-IZO (amorphous indium zinc oxide) transparent electrodes on plastic substrates and investigate their electrical characteristics under bending states. Our a-IGZO TFTs show a high transmittance of 82% at a wavelength of 550 nm. And these TFTs have an ratio of , a field effect mobility of , and a subthreshold swing of 186 mV/dec. The good electrical characteristics are retained even after bending with a curvature radius of 18 mm corresponding to a strain of 0.5% owing to mechanical durability of the transparent electrodes used in this study.
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