Publisher : The Korean Institute of Electrical and Electronic Material Engineers
DOI : 10.4313/JKEM.2016.29.2.95
Title & Authors
Study of Growth and Temperature Dependence of SnS Thin Films Using a Rapid Thermal Processing Shim, Ji-Hyun; Kim, Jeha;
We fabricated a tin sulfide (SnS) layer with Sn/Mo/glass layers followed by a RTP (rapid thermal processing), and studied the film growth and structural characteristics as a function of annealing temperature and time. The elemental sulfur (S) was cracked thermally and applied to form SnS polycrystalline film out of the Sn percursor at pre-determined pressures in the RTP tube. The sulfurization was done at the temperature from to for a time period of 10 to 40 min. At , 20 min., p-type SnS thin films was grown and showed the best composition of at.% of [S]/[Sn] 1 and  preferred orientation as investigated from using XRD (X-ray diffraction) analysis and EDS (energy dispersive spectroscopy) and SEM (scanning electron microscopy), and optical absorption by a UV-VIS spectrometer. In this paper, we report the details of growth characteristics of single phase SnS thin film as a function of annealing temperature and time associated with the pressure and ambient gas in the RTP tube.
Tin sulfide (SnS);Rapid thermal process;Sulfurization;Elemental sulfur(S);Annealing temperature;
P. Jackson, D. Hariskos, R. Wuerz, O. Kiowski, A. Bauer, Phys. Status Solidi RRL, 9, 28 (2015). [DOI: http://dx.doi.org/10.1002/pssr.201409520]
J. Gifford, PV magazine, http://www.pv-magazine.com/news/details/beitrag/inside-tsmcs-165-cigs-module-worldrecord_100019430/#axzz3tQFcexg8 (2015).
C. Waida, A . Paulalivisatos, and D. Kammen, Environ. Sci. Technol. 43, 2072 (2009). [DOI: http://dx.doi.org/10.1021/es8019534]
M. A. Greeen, K. Emery, Y. Hishikawa, W. Warta, and E. D. Dunlop, Solar cell efficiency tables. Prog. Photovoltaics Res Appl., 19, 565 (2011). [DOI: http://dx.doi.org/10.1002/pip.1150]
P. Sinsermsuksakul, L. Sun, S. W. Lee, H. H. Park, S. B. Kim, C. Yang, and R. G. Gordon, Adv. Energy Mat., 1400496 (2014).
P. Sinsermsuksakul, K. Hartman, S. D. Kim, J. Heo, L. Sun, H. H. Park, R. Chakraborty, T. Buonassisi, and R. G. Gordon, Applied Physics Letters, 102. 053901 (2013). [DOI: http://dx.doi.org/10.1063/1.4789855]
W. K. Kim, E. A. Payzant, T. J. Anderson, and O. D. Crisalle, Thin Solid Films 515, 5837 (2007). [DOI: http://dx.doi.org/10.1016/j.tsf.2006.12.173]
C. Cifuentes, M. Botero, E. Romero, C. Calderon, and G. Gordillo, Brazilian J. Phys., 36, 1046 (2006). [DOI: http://dx.doi.org/10.1590/S0103-97332006000600066]