Publisher : The Korean Institute of Electrical and Electronic Material Engineers
DOI : 10.4313/JKEM.2016.29.4.199
Title & Authors
Analysis of The Electrical Characteristics of Power MOSFET with Floating Island Kang, Ey Goo;
This paper was proposed floating island power MOSFET for lowering on state resistance and the proposed device was maintained 600 V breakdown voltage. The electrical field distribution of floating island power MOSFET was dispersed to floating island between P-base and N-drift. Therefore, we designed higher doping concentration of drift region than doping concentration of planar type power MOSFET. And so we obtain the lower on resistance than on resistance of planar type power MOSFET. We needed the higher doping concentration of floating island than doping concentration of drift region and needed width and depth of floating island for formation of floating island region. We obtained the optimal parameters. The depth of floating island was . The doping concentration of floating island was . And the width of floating island was . As a result of designing the floating island power MOSFET, we obtained 723 V breakdown voltage and on resistance. When we compared to planar power MOSFET, the on resistance was lowered 24.5% than its of planar power MOSFET. The proposed device will be used to electrical vehicle and renewable industry.
Power MOSFET;Floating island;On-resistance;Breakdown voltage;Power devices;
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