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A Study of the Electrical Characteristics of WOx Material for Non-Volatile Resistive Random Access Memory
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 Title & Authors
A Study of the Electrical Characteristics of WOx Material for Non-Volatile Resistive Random Access Memory
Jung, Kyun Ho; Kim, Kyong Min; Song, Seung Gon; Park, Yun Sun; Park, Kyoung Wan; Sok, Jung Hyun;
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 Abstract
In this study, we observed current-voltage characteristics of the MIM (metal-insulator-metal) structure. The material was used between metal electrodes as the oxide insulator. The structure of the shows bipolar resistive switching and the operating direction of the resistive switching is clockwise, which means set at negative voltage and reset at positive voltage. The set process from HRS (high resistance state) to LRS (low resistance state) occurred at -2.6V. The reset process from LRS to HRS occurred at 2.78V. The on/off current ratio was about 10 and resistive switching was performed for 5 cycles in the endurance characteristics. With consecutive switching cycles, the stable and were observed. The electrical transport mechanism of the device was based on the migration of oxygen ions and the current-voltage curve is following (Ohm's Law Trap-Controlled Space Charge Limited Current Ohm's Law) process in the positive voltage region.
 Keywords
ReRAM;Bipolar resistive switching;Migration of oxygen ion;Trap-controlled space charge limited current;
 Language
Korean
 Cited by
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