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Modeling of Reversible and Irreversible Threshold Voltage Shift in Thin-film Transistors
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 Title & Authors
Modeling of Reversible and Irreversible Threshold Voltage Shift in Thin-film Transistors
Jung, Taeho;
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 Abstract
Threshold voltage shift has been observed from many thin-film transistors (TFTs) and the time evolution of the shift can be modeled as the stretched-exponential and -hyperbola function. These analytic models are derived from the kinetic equation for defect-creation or charge-trapping and the equation consists of only reversible reactions. In reality TFT`s a shift is permanent due to an irreversible reaction and, as a result, it is reasonable to consider that both reversible and irreversible reactions exist in a TFT. In this paper the case when both reactions exist in parallel and make a combined threshold voltage shift is modeled and simulated. The results show that a combined threshold voltage shift observed from a TFT may agrees with the analytic models and, thus, the analytic models don`t guarantee whether the cause of the shift is defection-creation or charge-trapping.
 Keywords
Threshold voltage shift;Thin-film transistor;Kinetic equation;
 Language
Korean
 Cited by
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