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SnS-embedded High Performing and Transparent UV Photodetector
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 Title & Authors
SnS-embedded High Performing and Transparent UV Photodetector
Park, Wang-Hee; Ban, Dong-Kyun; Kim, Hyunki; Kim, Hong-Sik; Patel, Malkeshkumar; Yoo, Jeong Hee; Kim, Joondong;
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 Abstract
Transparent UV photodetector was achieved by using wide bandgap metal oxide materials. In order to realize transparent heterojunction UV photodetector, n-type ZnO and p-type NiO metal oxide materials were employed. High light-absorbing SnS layer was inserted into the n-ZnO and p-NiO layers. High-performing UV photodetector was realized by ZnO/SnS/NiO/ITO structures to provide extremely fast response times (Fall time: and rise time: ) and high rectifying ratio. The use of functional SnS-embedded photodetector would provide a route for high functional photoelectric devices.
 Keywords
ITO;AZO;NiO;Absorbance;SnS;Photoresponse ratio;
 Language
Korean
 Cited by
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