Publisher : The Korean Institute of Electromagnetic Engineering and Science
DOI : 10.5515/KJKIEES.2015.26.12.1083
Title & Authors
Design and Fabrication of 25 W Ka-Band SSPA Based on GaN HPA MMICs Ji, Hong-gu; Noh, Youn-sub; Choi, Youn-ho; Kwak, Chang-soo; Youm, In-bok; Seo, In-jong; Park, Hyung-jin; Jo, In-ho; Nam, Byung-chang; Kong, Dong-uk;
We designed and manufactured Ka-band SSPA include drive amplifier and high power amplifier MMICs by GaN commercial process. Also, we fabricated main components micro-strip line to WR28 waveguide transition and WR28 wave guide power combiner for Ka-band SSPA. This Ka-band SSPA shows saturated output power 44.2 dBm, power added efficiency 16.6 % and power gain 39.2 dB at 29~31 GHz frequency band.
이성팔, 조진호, 유문희, 최장섭, "천리안 통신 탑재체 개발 기술 및 활용", 한국전자파학회 전자파기술, 22(3), pp. 3-16, 2011년 5월.
C. Y. Ng, et al, "A 20-watt Ka-band GaN high power amplifier MMIC", Microwave Conference(EuMC), 2014 44th European, pp. 1348-1351, Oct. 2014.
F. Yamaki, et al, "Ruggedness and reliability of GaN HEMT", IEEE, EuMIC. pp. 328-331, Oct. 2011.
G. Zabra, et al, "An optimised waveguide to microstrip transition at K band", IEEE Microwave Conference, 26th European, pp. 6-13, Sep. 1996.
L. W. Epp, et al, "A high-power Ka-band(31-36 GHz) solid-state amplifier based on low-loss corporate wave-guide combining", Microwave Theory and Techniques, IEEE Trans., vol. 56. pp. 1899-1908, Aug. 2008.