Publisher : The Korean Institute of Electromagnetic Engineering and Science
DOI : 10.5515/KJKIEES.2015.26.9.783
Title & Authors
High-Efficiency GaN-HEMT Doherty Power Amplifier with Compact Harmonic Control Networks Kim, Yoonjae; Kim, Minseok; Kang, Hyunuk; Cho, Sooho; Bae, Jongseok; Lee, Hwiseob; Yang, Youngoo;
This paper presents a Doherty power amplifier(DPA) operating in the 2.6 GHz band for long term evolution(LTE) systems. In order to achieve high efficiency, second and third harmonic impedances are controlled using a compact output matching network. The DPA was implemented using a gallium nitride high electron mobility transistor(GaN-HEMT) that has many advantages, such as high power density and high efficiency. The implemented DPA was measured using an LTE downlink signal with a 10 MHz bandwidth and 6.5 dB PAPR. The implemented DPA exhibited a gain of 13.1 dB, a power-added efficiency(PAE) of 57.6 %, and an ACLR of -25.7 dBc at an average output power of 33.4 dBm.
Doherty Power Amplifier;Harmonic Impedance Control;GaN-HEMT;LTE;
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