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Design of Two-Stage X-Band Power Amplifier Using GaN-HEMT
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 Title & Authors
Design of Two-Stage X-Band Power Amplifier Using GaN-HEMT
Lee, Wooseok; Lee, Hwiseob; Park, Seungkuk; Lim, Wonseob; Han, Jaekyoung; Park, Kwanggun; Yang, Youngoo;
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This paper presents an X-band two-stage power amplifier using GaN-HEMT. Two-stage structure was adopted to take its high gain and simple inter-stage matching network. Based on a 3D EM simulation, the bond-wire inductance and the parasitic capacitance were predicted. By reducing bond-wire inductance, Q of the matching network is decreased and the bandwidth is improved. The implemented two-stage PA shows a power gain of more than 16 dB, saturated output power of more than 42.5 dBm, and a efficiency of more than 35 % in frequency range of 8.1~8.5 GHz with an operating voltage of 40 V.
GaN-HEMT;X-Band;Power Amplifier;Two-Stage Power Amplifier;
 Cited by
X-대역 50 W급 펄스 모드 GaN HEMT 내부 정합 전력 증폭기,강현석;배경태;이익준;차현원;민병규;강동민;김동욱;

한국전자파학회논문지, 2016. vol.27. 10, pp.892-899 crossref(new window)
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